Journal of Electromagnetic Analysis and Applications

Volume 12, Issue 10 (October 2020)

ISSN Print: 1942-0730   ISSN Online: 1942-0749

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Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination

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DOI: 10.4236/jemaa.2020.1210012    86 Downloads   248 Views  

ABSTRACT

The modelling and determination of the geometric parameters of a solar cell are important data, which influence the evaluation of its performance under specific operating conditions, as well as its industrial development for a low cost. In this work, an n+/p/p+ crystalline silicon solar cell is studied under monochromatic illumination in modulation and placed in a constant magnetic field. The minority carriers’ diffusion coefficient (D(ω, B), in the (p) base leads to maximum values (Dmax) at resonance frequencies (ωr). These values are used in expressions of AC minority carriers recombination velocity (Sb(Dmax, H)) in the rear of the base, to extract the optimum thickness while solar cell is subjected to these specific conditions. Optimum thickness modelling relationships, depending respectively on Dmax, ωr and B, are then established, and will be data for industrial development of low-cost solar cells for specific use.

Cite this paper

Ndiaye, A. , Gueye, S. , Mbaye Fall, M. , Diop, G. , Ba, A. , Ba, M. , Diatta, I. , Habiboullah, L. and Sissoko, G. (2020) Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination. Journal of Electromagnetic Analysis and Applications, 12, 145-158. doi: 10.4236/jemaa.2020.1210012.

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