Author(s)

Grygoriy S. Pekar^*, Alexandr F. Singaеvsky, Myhailo M. Lokshin, Ilya A. Vasin, Oleksandr V. Dubikovskyi

V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Nauki, Kyiv, Ukraine.

Unconventional ways to improve the efficiency of purification of two different semiconductor materials of current interest, ZnO and Ge, are described. It is shown that, by using chemically assisted vapour transport of ZnO with carbon as a transporting agent, the degree of chemical purity of ZnO can be increased by more than an order of magnitude. It is also found that heating of the molten Ge in the experimentally determined narrow (about 20?C wide) temperature range in which an intense evaporation of certain substances is observed, leads to a significant reduction of germanium contamination. As a result, a subsequent deep purification of pre-heat treated germanium by zone refining can be achieved at twice reduced (as compared with “non-treated” Ge) number of passes of a boat with germanium through the melting zones. Thus, the Ge purification process becomes faster, cheaper and more efficient.

Purification, Germanium, Zinc Oxide

Pekar, G. , Singaеvsky, A. , Lokshin, M. , Vasin, I. and Dubikovskyi, O. (2019) Improved Efficiency of ZnO and Ge Purification. Journal of Crystallization Process and Technology, 9, 39-47. doi: 10.4236/jcpt.2019.93003.