Modelling and Calculation of Silicon Conduction Band Structure and Parameters with Arbitrary Uniaxial Stress

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ISSN Print: 2327-4352
ISSN Online: 2327-4379
www.scirp.org/journal/jamp
E-mail: jamp@scirp.org

"Modelling and Calculation of Silicon Conduction Band Structure and Parameters with Arbitrary Uniaxial Stress"
written by Guanyu Wang, Mingdao Yu, Chunyu Zhou,
published by Journal of Applied Mathematics and Physics, Vol.6 No.1, 2018

has been cited by the following article(s):

[1]	Optimization of effective electron mass in strained silicon nanosheets
	AIP Advances, 2024

[2]	The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology
	… on Nuclear Science, 2024

[3]	Features of the longitudinal and transverse tensoresistances of low-resistance n-Si
	Physics Open, 2023

[1]	Optimization of effective electron mass in strained silicon nanosheets AIP Advances, 2024 DOI:10.1063/5.0178101

[2]	The Effects of Threshold Voltage and Number of Fins Per Transistor on the TID Response of GF 12LP Technology IEEE Transactions on Nuclear Science, 2024 DOI:10.1109/TNS.2024.3359113

[3]	The Effects of Threshold Voltage and Number of Fins Per Transistor on the TID Response of GF 12LP Technology IEEE Transactions on Nuclear Science, 2024 DOI:10.1109/TNS.2024.3359113

[4]	Features of the longitudinal and transverse tensoresistances of low-resistance n-Si Physics Open, 2023 DOI:10.1016/j.physo.2023.100171

[5]	Features of the longitudinal and transverse tensoresistances of low-resistance n-Si Physics Open, 2023 DOI:10.1016/j.physo.2023.100171

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