A Study by <i>Ab-Initio</i> Calculation of Structural and Electronic Properties of Semiconductor Nanostructures Based on ZnSe

ISSN Print: 2153-117X
ISSN Online: 2153-1188
www.scirp.org/journal/msa
E-mail: msa@scirp.org

"A Study by Ab-Initio Calculation of Structural and Electronic Properties of Semiconductor Nanostructures Based on ZnSe"
written by A. Rachidi, E. H. Atmani, N. Fazouan, M. Boujnah,
published by Materials Sciences and Applications, Vol.7 No.9, 2016

has been cited by the following article(s):

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[10]	Band alignment and charge transfer predictions of ZnO/ZnX (X= S, Se or Te) interfaces applied to solar cells: a PBE+ U theoretical study
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[11]	Computational Condensed Matter

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[3]	Transfer matrix method for calculating UV–Vis reflectivity/transmission spectra to assess thickness of nanostructured zb CdSe and ZnSe films grown on GaAs (001) Applied Physics A, 2023 DOI:10.1007/s00339-022-06267-5

[4]	Density functional theory study of Zn(1−x)FexSe: Electronic structure, phonon, and magnetic properties AIP Advances, 2023 DOI:10.1063/5.0133408

[5]	Density functional theory study of Zn(1−x)FexSe: Electronic structure, phonon, and magnetic properties AIP Advances, 2023 DOI:10.1063/5.0133408

[6]	Structural and Electronic Properties of Bulk ZnX (X = O, S, Se, Te), ZnF2, and ZnO/ZnF2: A DFT Investigation within PBE, PBE + U, and Hybrid HSE Functionals The Journal of Physical Chemistry A, 2020 DOI:10.1021/acs.jpca.9b11415

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