Flexible Graphene Devices with an Embedded Back-Gate

Graphene

ISSN Print: 2169-3439
ISSN Online: 2169-3471
www.scirp.org/journal/graphene
E-mail: graphene@scirp.org

Citations

"Flexible Graphene Devices with an Embedded Back-Gate"
written by Jasper van Veen, Andres Castellanos- Gomez, Herre S. J. van der Zant, Gary A. Steele,
published by Graphene, Vol.2 No.1, 2013

has been cited by the following article(s):

Google Scholar
CrossRef

[1]	(Invited) Advanced Semiconductor Devices for Future CMOS Technologies
	ECS Transactions, 2015

[2]	Surface treatment of polyimide substrates for the transfer and multitransfer of graphene films
	Applied Surface Science, 2015

[3]	Advanced Semiconductor Devices for Future CMOS Technologies
	Advanced CMOS-Compatible Semiconductor Devices 17, 2015

[4]	Strain-dependent conductivity in biased bilayer graphene
	Physical Review B, 2014

[1]	Graphene Flakes in Arc Plasma: Conditions for the Fast Single-Layer Growth Graphene, 2016 DOI:10.4236/graphene.2016.52009

[2]	Surface treatment of polyimide substrates for the transfer and multitransfer of graphene films Applied Surface Science, 2015 DOI:10.1016/j.apsusc.2015.04.201

[3]	Strain-dependent conductivity in biased bilayer graphene Physical Review B, 2014 DOI:10.1103/PhysRevB.90.235403

	customer@scirp.org
	+86 18163351462(WhatsApp)
	1655362766

	Paper Publishing WeChat

Top

Graphene

Graphene

Journals Menu

Guidelines & Policies

Home

About SCIRP

Service

Policies