Journal of Crystallization Process and Technology

Journal of Crystallization Process and Technology

ISSN Print: 2161-7678
ISSN Online: 2161-7686
www.scirp.org/journal/jcpt
E-mail: jcpt@scirp.org
"A New Method for Research of Grown-In Microdefects in Dislocation-Free Silicon Single Crystals"
written by V.I Talanin, I.E Talanin, N.Ph Ustimenko,
published by Journal of Crystallization Process and Technology, Vol.1 No.2, 2011
has been cited by the following article(s):
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