|
[1]
|
Plasma sheath tailoring by a magnetic field for three-dimensional plasma etching
Applied Physics Letters,
2024
DOI:10.1063/5.0187685
|
|
|
|
|
[2]
|
Specialized design for three basic mask patterns counteract charging effects during plasma etching
Physics of Plasmas,
2024
DOI:10.1063/5.0187837
|
|
|
|
|
[3]
|
Experimental investigation of an electronegative cylindrical capacitively coupled geometrically asymmetric plasma discharge with an axisymmetric magnetic field
Physics of Plasmas,
2024
DOI:10.1063/5.0208653
|
|
|
|
|
[4]
|
Experimental investigation of an electronegative cylindrical capacitively coupled geometrically asymmetric plasma discharge with an axisymmetric magnetic field
Physics of Plasmas,
2024
DOI:10.1063/5.0208653
|
|
|
|
|
[5]
|
Voltage waveform tailoring for high aspect ratio plasma etching of SiO2 using Ar/CF4/O2 mixtures: Consequences of ion and electron distributions on etch profiles
Journal of Vacuum Science & Technology A,
2023
DOI:10.1116/6.0002290
|
|
|
|
|
[6]
|
Voltage waveform tailoring for high aspect ratio plasma etching of SiO2 using Ar/CF4/O2 mixtures: Consequences of ion and electron distributions on etch profiles
Journal of Vacuum Science & Technology A,
2023
DOI:10.1116/6.0002290
|
|
|
|
|
[7]
|
Exploring the influence of gas flow rate on surface charging issue during plasma etching
Pramana,
2022
DOI:10.1007/s12043-022-02320-3
|
|
|
|
|
[8]
|
Charging Effect in Basic and Complex Mask Patterns During Plasma Etching
Plasma Chemistry and Plasma Processing,
2022
DOI:10.1007/s11090-022-10277-9
|
|
|
|
|
[9]
|
Study on the Pulse Phase Lag Effect on Two Mask Holes During Plasma Etching
Brazilian Journal of Physics,
2021
DOI:10.1007/s13538-021-00939-y
|
|
|
|
|
[10]
|
Study on the Pulse Phase Lag Effect on Two Mask Holes During Plasma Etching
Brazilian Journal of Physics,
2021
DOI:10.1007/s13538-021-00939-y
|
|
|
|
|
[11]
|
Electric field reversals resulting from voltage waveform tailoring in Ar/O2 capacitively coupled plasmas sustained in asymmetric systems
Plasma Sources Science and Technology,
2021
DOI:10.1088/1361-6595/ac14a7
|
|
|
|
|
[12]
|
Study on the influence of ion incident energy on surface charging in plasma etching
Physica Scripta,
2021
DOI:10.1088/1402-4896/ac233e
|
|
|
|
|
[13]
|
Control of electron velocity distributions at the wafer by tailored voltage waveforms in capacitively coupled plasmas to compensate surface charging in high-aspect ratio etch features
Journal of Physics D: Applied Physics,
2021
DOI:10.1088/1361-6463/abf229
|
|
|
|
|
[14]
|
Exploring the Effects of Placement and Electron Angular Distribution on Two Adjacent Mask Holes During Plasma Etching Process
Plasma Chemistry and Plasma Processing,
2020
DOI:10.1007/s11090-020-10113-y
|
|
|
|
|
[15]
|
Study on the influence of electron angular distribution on mask pattern damage in plasma etching
Plasma Processes and Polymers,
2020
DOI:10.1002/ppap.202000014
|
|
|
|
|
[16]
|
Electron dynamics in low pressure capacitively coupled radio frequency discharges
Journal of Applied Physics,
2020
DOI:10.1063/5.0003114
|
|
|
|
|
[17]
|
Electron dynamics in low pressure capacitively coupled radio frequency discharges
Journal of Applied Physics,
2020
DOI:10.1063/5.0003114
|
|
|
|
|
[18]
|
Electron dynamics in low pressure capacitively coupled radio frequency discharges
Journal of Applied Physics,
2020
DOI:10.1063/5.0003114
|
|
|
|
|
[19]
|
Electron dynamics in low pressure capacitively coupled radio frequency discharges
Journal of Applied Physics,
2020
DOI:10.1063/5.0003114
|
|
|
|
|
[20]
|
Study on the influence of electron angular distribution on mask pattern damage in plasma etching
Plasma Processes and Polymers,
2020
DOI:10.1002/ppap.202000014
|
|
|
|
|
[21]
|
Voltage waveform tailoring in radio frequency plasmas for surface charge neutralization inside etch trenches
Plasma Sources Science and Technology,
2019
DOI:10.1088/1361-6595/ab2c72
|
|
|
|
|
[22]
|
Application of the Level Set Method in Three-Dimensional Simulation of the Roughening and Smoothing of Substrates in Nanotechnologies
World Journal of Nano Science and Engineering,
2014
DOI:10.4236/wjnse.2014.42011
|
|
|
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