"
Accurate Electronic, Transport, and Bulk Properties of Zinc Blende Gallium Arsenide (Zb-GaAs)"
written by Yacouba Issa Diakite, Sibiri D. Traore, Yuriy Malozovsky, Bethuel Khamala, Lashounda Franklin, Diola Bagayoko,
published by
Journal of Modern Physics,
Vol.8 No.4, 2017
has been cited by the following article(s):
[1]
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Fabrication of gallium nitride waveguide resonators by high-power impulse magnetron sputtering at room temperature
APL Photonics,
2024
DOI:10.1063/5.0169455
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[2]
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First Principle Calculation of Accurate Electronic and Related Properties of Zinc Blende Indium Arsenide (zb-InAs)
Materials,
2022
DOI:10.3390/ma15103690
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[3]
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Modeling Photocathode Performance Using MedeA-VASP Simulation Software
IEEE Transactions on Nuclear Science,
2020
DOI:10.1109/TNS.2020.3011355
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[4]
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Supertetrahedral Layers Based on GaAs or InAs
Journal of the American Chemical Society,
2019
DOI:10.1021/jacs.9b04712
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[5]
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Observation of strong nonlinear interactions in parametric down-conversion of X-rays into ultraviolet radiation
Nature Communications,
2019
DOI:10.1038/s41467-019-13629-w
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[6]
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Observation of strong nonlinear interactions in parametric down-conversion of X-rays into ultraviolet radiation
Nature Communications,
2019
DOI:10.1038/s41467-019-13629-w
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[7]
|
Supertetrahedral Layers Based on GaAs or InAs
Journal of the American Chemical Society,
2019
DOI:10.1021/jacs.9b04712
|
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|
[8]
|
Observation of strong nonlinear interactions in parametric down-conversion of X-rays into ultraviolet radiation
Nature Communications,
2019
DOI:10.1038/s41467-019-13629-w
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[9]
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Manufacture of photovoltaic cells with hybrid organic–inorganic bulk heterojunction
Materials and Manufacturing Processes,
2018
DOI:10.1080/10426914.2017.1415445
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[10]
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Stability of rolled-up GaAs nanotubes
Journal of Molecular Modeling,
2017
DOI:10.1007/s00894-017-3371-3
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