Negative Resistance Region 10 nm Gate Length on FINFET

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Journal of Modern Physics

ISSN Print: 2153-1196
ISSN Online: 2153-120X
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E-mail: jmp@scirp.org

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"Negative Resistance Region 10 nm Gate Length on FINFET"
written by Maryam Nezafat, Omid Zeynali, Daruosh Masti,
published by Journal of Modern Physics, Vol.5 No.12, 2014

has been cited by the following article(s):

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CrossRef

[1]	Impact of Doping concentration and gate voltages on Simulation of n-FinFET
	2017

[2]	Optimizing Current Characteristics of 32 nm FinFET by Controlling Fin Width
	Communications on Applied Electronics, 2015

[3]	32 nm Gate Length FinFET: Impact of Doping
	International Journal of Computer Applications, 2015

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