has been cited by the following article(s):
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[1]
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Photoemission Study of GaN Passivation Layers and Band Alignment at GaInP(100) Heterointerfaces
ACS Applied Materials & Interfaces,
2025
DOI:10.1021/acsami.4c17453
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[2]
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Wetting Layer and Formation of Metal - Semiconductor Interface
Defect and Diffusion Forum,
2018
DOI:10.4028/www.scientific.net/DDF.386.9
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[3]
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The use of AES and EELS for complex analysis of two-dimensional coatings and their growth process
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering,
2017
DOI:10.17073/1609-3577-2017-4-239-255
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[4]
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The use of AES and EELS for complex analysis of two-dimensional coatings and their growth process
Modern Electronic Materials,
2017
DOI:10.1016/j.moem.2017.12.001
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