"
Solid-State Reaction and Vacancy-Type Defects in Bilayer Fe/Hf Studied by the Slow Positron Beam"
written by K. Yamada, T. Sasaki, T. Nagata, I. Kanazawa, R. Suzuki, T. Ohdaira, K. Nozawa, F. Komori,
published by
Journal of Applied Mathematics and Physics,
Vol.3 No.2, 2015
has been cited by the following article(s):
|
[1]
|
Memory device based on a nano-granulars and nano-worms structured MoS2 active layer: The origin of resistive switching characteristics
Vacuum,
2024
DOI:10.1016/j.vacuum.2024.112989
|
|
|
|