Author(s)

Ousmane Sow¹, Mamadou Lamine Ba², Hamet Yoro Ba², Mohamed Abderrahim Ould El Moujtaba², Youssou Traore³, Masse Samba Diop³, Habiboullah Lemrabott², Mamadou Wade³, Grégoire Sissoko²

¹University Institute of Technology, University of Thiès, Thiès, Sénégal.
²Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal.
³Ecole Polytechnique de Thiès, Thiès, Sénégal.

The concept of the recombination of the minority carrier’s recombination velocity at the junction and in the rear, is used for determination, optimum thickness and then shunt resistance in the base of the silicon solar cell, maintained in steady state and under energy from the irradiation flow of charged particles. Resistance shunt is obtained and modeled through a relationship expressed according to the flow and energy of irradiation imposed on the solar cell.

Silicon Solar Cell, Irradiation, Recombination Velocity, Shunt Resistance, Optimum Base Thickness

Sow, O. , Ba, M. , Ba, H. , El Moujtaba, M. , Traore, Y. , Diop, M. , Lemrabott, H. , Wade, M. and Sissoko, G. (2019) Shunt Resistance Determination in a Silicon Solar Cell: Effect of Flow Irradiation Energy and Base Thickness. Journal of Electromagnetic Analysis and Applications, 11, 203-216. doi: 10.4236/jemaa.2019.1112014.