Author(s)

Mamadou Lamine Ba¹, Ndeye Thiam¹, Moustapha Thiame², Youssou Traore², Masse Samba Diop², Mamour Ba², Cheikh Tidiane Sarr², Mamadou Wade¹, Gregoire Sissoko²

¹Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal.
²Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal.

In this work, we propose a method to determinate the optimum thickness of a monofacial silicon solar cell under irradiation. The expressions of back surface recombination velocity depending the damage coefficient (kl) and irradiation energy (ø_p) are established. From their plots, base optimum thickness is deduced from the intercept points of the curves. The short-circuit currents Jsc0 and Jsc1 corresponding to the recombination velocity Sb0 and Sb1 are determinated and a correlation between the irradiation energy, the damage coefficient and optimum thickness of the base is established.

Silicon Solar Cell, Irradiation, Recombination Velocity, Base Thickness

Ba, M. , Thiam, N. , Thiame, M. , Traore, Y. , Diop, M. , Ba, M. , Sarr, C. , Wade, M. and Sissoko, G. (2019) Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles. Journal of Electromagnetic Analysis and Applications, 11, 173-185. doi: 10.4236/jemaa.2019.1110012.