Author(s)

Takashi Ehara

Department of Human Culture, Faculty of Human Studies, Ishinomaki Senshu University, Ishinomaki, Japan.

We prepare CuGaO₂ thin films on SiO₂ substrates by using the sol-gel spin-coating method with two combinations of Cu and a Ga source, Cu and Ga nitrate, or acetylacetonate. X-ray diffraction analysis reveals that the thin films prepared using nitrate sol that are annealed at a temperature of 850°C - 950°C show both c-axis-orientated peaks, (006) and a non-c-axis-oriented peak (012) with similar intensity; little dependence of signal intensity on annealing temperature is also shown. The films are opaque in appearance at these annealing temperatures. Scanning electron microscope observation reveals that the opaque appearance is due to the texture or cracks on the surface of the films. In contrast, the films prepared using acetylacetonate show a (006) peak with higher signal intensity than the (012) peaks. The films show more transparent appearance than that of the films by nitrate. The highest conductivity of the film is 5.7 × 10^-4Ω^-1·cm^-1, obtained in the films by nitrate annealed at 850°C.

Transparent Conductive Oxide, Delafossite, CuGaO₂, Sol-Gel, Thin Films

Ehara, T. (2018) Preparation of CuGaO₂ Thin Film by a Sol-Gel Method Using Two Kinds of Metal Source Combination. Journal of Materials Science and Chemical Engineering, 6, 68-78. doi: 10.4236/msce.2018.68006.