Author(s)

Junji Yamanaka¹, Shigenori Inoue¹, Keisuke Arimoto¹, Kiyokazu Nakagawa¹, Kentarou Sawano², Yasuhiro Shiraki², Atsushi Moriya³, Yasuhiro Inokuchi³, Yasuo Kunii³

¹Center for Crystal Science and Technology, University of Yamanashi, Kofu, Japan.
²Advanced Research Laboratories, Tokyo City University, Tokyo, Japan.
³Hitachi Kokusai Electric Inc., Toyama, Japan.

Strained Heterodevice, Silicon-Carbon Alloy, Ion Implantation, Transmission Electron Microscopy

Yamanaka, J. , Inoue, S. , Arimoto, K. , Nakagawa, K. , Sawano, K. , Shiraki, Y. , Moriya, A. , Inokuchi, Y. and Kunii, Y. (2017) TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing. Journal of Materials Science and Chemical Engineering, 5, 15-25. doi: 10.4236/msce.2017.51003.