Author(s)

V. R. Chinchamalatpure, S. A. Ghosh, G. N. Chaudhari

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BaTiO3 thin film has been deposited on Si(100) substrate using sol-gel process and deposited by using spin – coating technique. The BaTiO3/Si(100) structures were studied by structural and electrical characteristics. The X-ray diffrac-tion of BaTiO3/Si(100) shows that the diffraction peaks become increasing sharp with increasing calcination tempera-tures indicating the enhance crystallinity of the films. Scanning electron microscopy of BaTiO3 thin films shows the crack free and uniform nature. The capacitance-voltage measurement of BaTiO3 thin film deposited on Si(100) an-nealed at 600℃ shows large frequency dispersion in the accumulation region. The current-voltage measurement of BaTiO3/Si shows the ideality factor was approaches to unity at 600℃.

Sol-Gel Technique, BaTiO3 Thin Film, C-V, I-V

Chinchamalatpure, V. , Ghosh, S. and Chaudhari, G. (2010) Synthesis and Electrical Characterization of BaTiO3 Thin Films on Si(100). Materials Sciences and Applications, 1, 187-190. doi: 10.4236/msa.2010.14029.