Cu-Zn-S (CZS) films were deposited by the spray pyrolysis method. As-deposited CZS film showed a low crystallinity. The resistivity of CZS film with Cu/(Cu+Zn) ratio of 50% is around 10^-2Ω﹒cm. The CZS film elements using spray Cu-Zn (=1:1) solution with thiourea was confirmed as  Cu:Zn:Sn=2:2:3 by ICP-MS and EDX. The band gap of CZS films was varied in the range of 1.8 - 3.5 ev when the  Cu/(Cu+Zn)ratio was increased from 0 to 67%; CZS film with Cu/(Cu+Zn)ratio of 50 % showed an wide band gap of 2 eV. The photovoltaic characteristics were confirmed with cell structure of . The best cell was observed at the CZS films with Cu/(Cu+Zn)ratio of 50%; these cells depicted a conversion efficiency of 1.7%.