Structural and Optical Properties of Znx-1MgxO Ceramic Composites

Abstract

In the present work, we investigate the structural and optical properties of Znx-1MgxO composites prepared by the standard sintering method at 1200?C during 24 hours and doped with different percentages of magnesium x between 0% and 40%. For this purpose, we have used the X-ray diffraction (XRD) and the atomic force microscopy (AFM) to study the effect of the magnesium’s proportion on the crystalline and morphology proprieties of the obtained samples. XRD analysis showed that all films are polycrystalline with a hexagonal wurtzite structure, with an orientation of the grains according to directions (0002) and (10-10). The AFM characterisation show that the degree of surface roughness (RMS) increases with the increasing of MgO content. Optical properties of the ceramics were investigated by Absorbance and Reflectance measurements at room temperature in the wavelength range 200 - 2400 nm. Optical band gap energies (Eg) were determined. Further cathodoluminescence and dielectric measurements would be carried out to study the influence of MgO doping on the dielectric and luminescent properties of the ZnMgO ceramics.

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Othman, Z. and Matoussi, A. (2012) Structural and Optical Properties of Znx-1MgxO Ceramic Composites. Materials Sciences and Applications, 3, 538-542. doi: 10.4236/msa.2012.38076.

Conflicts of Interest

The authors declare no conflicts of interest.

References

[1] H. E. Brown, “The Exciton Spectrum of Zinc Oxide,” Journal of Physics and Chemistry of Solids, Vol. 15, No. 1-2, 1960, pp. 86-89.
[2] S. Gledhil, A. Grimm, A. Allsop, T. Koehler, C. Camus, L. Lux-Steiner and C.-H. Fisher, “A Spray Pyrolysis Route to the Undoped ZnO Layer of Cu(In,Ga)(S,Se)2 Solar Cells,” Thin Solid Films, Vol. 517, No. 7, 2009, pp. 2309-2311.
[3] S. Major and K. L. Chopra, “Indium-Doped Zinc Oxide Films as Transparent Electrodes for Solar Cells,” Solar Energy Materials, Vol. 17, No. 5, 1988, pp. 319-327. doi:10.1016/0165-1633(88)90014-7
[4] S. T. Shishiyanu, T. S. Shishiyanu and O. I. Lupan, “Sensing Characteristics of Tin-Doped ZnO Thin Films as NO2 Gas Sensor,” Sensors and Actuators B, Vol. 107, 2005, pp. 379-386. doi:10.1016/j.snb.2004.10.030
[5] T. K. Gupta, “Applications of Zinc Oxide Varistors,” Journal of the American Ceramic Society, Vol. 73, No. 7, 1990, pp. 1817-1840. doi:10.1111/j.1151-2916.1990.tb05232.x
[6] S. Anas, R. V. Mangalaraja, M. Poothayal, S. K. Shukla and S. Ananthakumar, “Direct Synthesis of Varistor- Grade Doped Nanocrystalline ZnO and Its Densification through a Step-Sintering Technique,” Acta Materialia, Vol. 55, No. 17, 2007, pp. 5792-5801. doi:10.1016/j.actamat.2007.06.047
[7] Y. I. Alivov, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M Ataev, A. K. Omaev, M. V. Chukichev and D. M. Bagnall, “Fabrication and Characterization of n-ZnO/ p-AlGaN Heterojunction Light-Emitting Diodes on 6H- SiC Substrates,” Applied Physics Letters, Vol. 83, No. 23, 2003, pp. 4719-4721. doi:10.1063/1.1632537
[8] H. S. Kim, F. Lugo, S. J. Pearton, D. P. Norton, Y. L. Wang and F. Ren, “Phosphorus Doped ZnO Light Emitting Diodes Fabricated via Pulsed Laser Deposition,” Applied Physics Letters, Vol. 92, 2008, Article ID 112108. doi:10.1063/1.2900711
[9] D. C. Look, D. C. Reynolds, J. W. Hemsky, R. L. Jones and J. R. Sizelove, “Production and Annealing of Electron Irradiation Damage in ZnO,” Applied Physics Letters, Vol. 75, No. 6, 1999, pp. 811-813. doi:10.1063/1.124521
[10] C. Coskun, D. C. Look, G. C. Farlow and J. R. Sizelove, “Radiation Hardness of ZnO at Low Temperatures,” Semiconductor Science and Technology, Vol. 19, No. 6, 2004, pp. 752-754. doi:10.1088/0268-1242/19/6/016
[11] Y. I. Alivov, J. E. Van Nostrand and D. C. Look, “Observation of 430 nm Electroluminescence from ZnO/GaN Heterojunction Light-Emitting Diodes,” Applied Physics Letters, Vol. 83, No. 14, 2003, pp. 2943-2945. doi:10.1063/1.1615308
[12] R. Perez-Casero, A. Gutierrez-Llorente, O. Pons-y-Moll, W. Seiler, R. M. Defourneau, D. Defourneau, E. Millon, J. Perriere, P. Goldner and B. Viana, “Er-Doped ZnO Thin Films Grown by Pulsed-Laser Deposition,” Applied Physics Letters, Vol. 97, No. 5, 2005, Article ID 054905.
[13] D. C. Oh, T. Suzuki, J. J. Kim, H. Makino, T. Hanada, M. W. Cho and T. Yao, “Electron-Trap Centers in ZnO Layers Grown by Molecular-Beam Epitaxy,” Applied Physics Letters, Vol. 86, No. 3, 2005, Article ID 032909. doi:10.1063/1.1849852
[14] W. Z. Xu, Z. Z. Ye, Y. J. Zeng, L. P. Zhu, B. H. Zhao, L. Jiang, J. G. Lu, H. P. He and S. B. Zhang, “ZnO Light-Emitting Diode Grown by Plasma-Assisted Metal Organic Chemical Vapor Deposition,” Applied Physics Letters, Vol. 88, No. 17, 2006, Article ID 173506. doi:10.1063/1.2199588
[15] D.-K. Hwang, S.-H. Kang, J.-H. Lim, E.-J. Yang, J.-Y. Oh, J.-H. Yang and S.-J. Park, “p-ZnO/n-GaN Heter- ostructure ZnO Light-Emitting Diodes,” Applied Physics Letters, Vol. 86, No. 22, 2005, Article ID 222101. doi:10.1063/1.1940736
[16] A. Kuroyanagi, “Properties of Aluminum-Doped ZnO Thin Films Grown by Electron Beam Evaporation,” Japanese Journal of Applied Physics, Vol. 28, 1989, pp. 219-222. doi:10.1143/JJAP.28.219
[17] J. De. Merchant and M. Cocivera, “Preparation and Dop- ing of Zinc Oxide Using Spray Pyrolysis,” Materials Chemistry, Vol. 7, No. 9, 1995, pp. 1742-1749.
[18] P. Nunes, B. Fernandes, E. Fortunato, P. Vilarinho and R. Martins, “Performances Presented by Zinc Oxide Thin Films Deposited by Spray Pyrolysis,” Thin Solid Films, Vol. 337, No. 1-2, 1999, pp. 176-179. doi:10.1016/S0040-6090(98)01394-7
[19] Z. B. Shao, C. Y. Wang, S. D. Geng, X. D. Sun and S. J. Geng, “Fabrication of nanometer-Sized Zinc Oxide at Low Decomposing Temperature,” Journal of Materials Processing Technology, Vol. 178, No. 1-3, 2006, pp. 247-250. doi:10.1016/j.jmatprotec.2006.03.174
[20] M. Chaari, A. Matoussi and Z. Fakhfakh, “Structural and Dielectric Properties of Sintering Zinc Oxide Bulk Ceramic,” Materials Sciences and Application, Vol. 2, No. 7, 2011, pp. 764-769. doi:10.4236/msa.2011.27105
[21] Y. Caglar, S. Aksoy, S. Ilican and M. Cagmar, “Crystalline Structure and Morphological Properties of Undoped and Sn Doped ZnO Thin Films,” Superlattices and Microstructures, Vol. 46, 2009, pp. 469-475. doi:10.1016/j.spmi.2009.05.005
[22] B. D. Cullity and S. R. Stock, “Elements of X-Ray Diffraction,” 3rd Edition, Prentice Hall, Upper Saddle River, 2001.
[23] P. M. Ratheesh Kumar, C. Sudha Kartha, K. P. Vijayakumar, F. Singh and D. K. Avasthi, “Effect of Fluorine Doping on Structural, Electrical and Optical Properties of ZnO Thin Films,” Materials Science and Engineering: B, Vol. 117, No. 3, 2005, pp. 307-312. doi:10.1016/j.mseb.2004.12.040
[24] A. Sanchez-Juarez, A. Tiburcio-Silver and A. Ortiz, “Properties of Fluorine-Doped ZnO Deposited onto Glass by Spray Pyrolysis,” Solar Energy Materials and Solar Cells, Vol. 52, No. 3-4, 1998, pp. 301-311. doi:10.1016/S0927-0248(97)00246-8
[25] J. I. Pankove, “Optical Processes in Semiconductors,” Prentice-Hall Inc., Upper Saddle River, 1971.
[26] S. Ilican, Y. Caglar, M. Caglar and B. Demirci, “Poly- Crystalline Indium-Doped ZnO Thin Films: Preparation and Characterization,” Journal of Optoelectronics and Advanced Materials, Vol. 10, No. 10, 2008, pp. 2592- 2598.
[27] H. Abdelkader, Y. Fayssal, D. Warda, A. Nadhir and A. M. Salah, “Les Propriétés Structurales, Optiques et électriques des Couches Minces de ZnO:Al élaborées par Spray Ultrasonique,” Nature and Technologie, No. 6, 2011, pp. 25-27.
[28] A. Ohtomo, et al., “MgxZn1?xO as a II-VI Widegap Semiconductor Alloy,” Applied Physics Letters, Vol. 72, No. 19, 1998, pp. 2466-2468. doi:10.1063/1.121384
[29] A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng, C. Jin, A. Kvit, R. M. Kolbas and O. W. Holland, “Optical and Structural Properties of Epitaxial MgxZn1?xO Alloys,” Applied Physics Letters, Vol. 75, No. 21, 1999, pp. 3327- 3329. doi:10.1063/1.125340
[30] Z. K. Tang, G. K. L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koiuma and Y. Segawa, “Room-Temperature Ultraviolet Laser Emission from Self-Assembled ZnO Microcrystallite Thin Films,” Applied Physics Letters, Vol. 72, No. 25, 1998, pp. 3270-3272. doi:10.1063/1.121620
[31] H. Cao, Y. G. Zhao, H. C. Ong, S. T. Ho, J. Y. Wu and R. P. H. Chang, “Ultraviolet Lasing in Resonators Formed by Scattering in Semiconductor Polycrystalline Films,” Applied Physics Letters, Vol. 73, No. 25, 1998, pp. 3656- 3658. doi:10.1063/1.122853
[32] C. Jin and R. J. Narayan, “Structural and Optical Properties of Hexagonal MgxZn1?xO Thin Films,” Journal of Electronic Materials, Vol. 35, No. 5, 2006, pp. 869-876. doi:10.1007/BF02692542
[33] E. R. Segnit and A. E. Holland, “The System MgO-ZnO- SiO2,” Journal of the American Ceramic Society, Vol. 48, No. 8, 1965, pp. 409-413. doi:10.1111/j.1151-2916.1965.tb14778.x

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