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Deep Level Transient Spectroscopy of AlGaInP LEDs

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DOI: 10.4236/jmp.2014.518203    3,544 Downloads   3,940 Views  
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ABSTRACT

Deep level transient spectroscopy (temperature scans) of AlGaInP based red light emitting diodes was carried out from 77 K to room temperature. At least ten defects were observed. Of these, five defects assigned to energy states 0.21, 0.22, 0.24, 0.26, and 0.24 eV were characterized. Respective capture cross-sections, measured at infinite temperature (T = ), QUOTE were found to be 8.84 × 10-16, 6.98 × 10-16, 7.86 × 10-16, 9.9 × 10-16 and 2.1 × 10-16 cm2. Corresponding concentrations of defects were 3.7 × 1013, 3.5 × 1013, 3.2 × 1013, 3.3 × 1013 and 3.1 × 1013 cm-3.

Cite this paper

Atiq, M. , Naz, N. and Ali, A. (2014) Deep Level Transient Spectroscopy of AlGaInP LEDs. Journal of Modern Physics, 5, 2075-2079. doi: 10.4236/jmp.2014.518203.

Conflicts of Interest

The authors declare no conflicts of interest.

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