On a Predictive Scheme of Slow Photoconductive Gain Evolution in Epitaxial Layer/Substrate Optoelectronic Nanodevices

G. E. Zardas, C. J. Aidinis, E. A. Anagnostakis, Ch. I. Symeonides

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DOI: 10.4236/ojm.2011.12006                

Abstract

The photoconductive response of the fundamental type of diodic nanodevice comprising a low resistivity, n-type epitaxial layer and a semi-insulating substrate is considered in terms of the optoelectronic parameter of photoconductive gain as experimentally measurable through monitoring the temporal evolution of conductivity current photoenhancement under continuous epilayer illumination-exposure. A modelling taking into account the built-in potential barrier of the interface of the epitaxial layer/substrate device (ESD) as well as its modification by the photovoltage induced within the illuminated ESD diode leads to predicting the technologically exploitable possibility of a notably slow photonic dose-evolution (exposure time-development) of the optonanoelectronics ESD photoconductive gain.

Keywords

Optoelectronic Nanodevices, Photoconductive Gain

Conflicts of Interest

The authors declare no conflicts of interest.

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