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Hexagonal Nano-Crystalline BCN Films Grown on Si (100) Substrate Studied by X-Ray Absorption Spectroscopy

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DOI: 10.4236/msa.2013.45A003    3,848 Downloads   5,859 Views   Citations

ABSTRACT

Hexagonal nano-crystalline boron carbonitride (h-BCN) films grown on Si (100) substrate have been precisely investigated. The films were synthesized by radio frequency plasma enhanced chemical vapor deposition using tris-dimethylamino borane as a single-source molecular precursor. The deposition was performed by setting RF power at 400 - 800 W. The reaction pressure was at 2.6 Pa and the substrate temperature was recorded at 700°C - 800°C. Formation of the nano-crystalline h-BCN compound has been confirmed by X-ray diffraction analysis. The diffraction peaks at 26.3° together with a small unknown peak at 29.2° were elucidated due to the formation of an h-BCN structure. The films composed of B, C, and N atoms with different B-N, B-C, C-N chemical bonds in forming the sp2-BCN atomic configuration studied by X-ray photoelectron spectroscopy. Orientation and local structures of the h-BCN hybrid were studied by near-edge X-ray absorption fine structure (NEXAFS) measurements. The dominant presence of p* and s* resonance peaks of the sp2-hybrid orbitals in the B K-edge NEXAFS spectra revealed the formation of the sp2-BCN configuration around B atoms like-BN3 in h-BN. The orientation was suggested on the basis of the polarization dependence of B K-edge and N K-edge of the NEXAFS spectra.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

M. Mannan, Y. Baba, N. Hirao, T. Kida, M. Nagano and H. Noguchi, "Hexagonal Nano-Crystalline BCN Films Grown on Si (100) Substrate Studied by X-Ray Absorption Spectroscopy," Materials Sciences and Applications, Vol. 4 No. 5A, 2013, pp. 11-19. doi: 10.4236/msa.2013.45A003.

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