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Optoelectronic Properties of GaN-Based Light-Emitting Diodes with Different Mesa Structures

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DOI: 10.4236/msa.2012.312122    3,455 Downloads   5,369 Views   Citations

ABSTRACT

GaN/InGaN lighting-emitting diodes with different mesa structures are studied. The current-voltage characteristics, light output power, luminous efficiency, and peak wavelength of the GaN/InGaN lighting-emitting diodes with different mesa patterns are compared. It shows that the current-voltage characteristics of the chips with more mesa areas are im- proved greatly by reducing the current crowding. With higher injection current the light output powers of GaN-based LED with more mesa areas are enhanced. And the chips with more P-electrode area have a smaller red shift and a little bit blue shift due to the reduction of the current crowding.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

X. Song, X. Zeng, J. Zhang, Y. Jin and X. Meng, "Optoelectronic Properties of GaN-Based Light-Emitting Diodes with Different Mesa Structures," Materials Sciences and Applications, Vol. 3 No. 12, 2012, pp. 838-842. doi: 10.4236/msa.2012.312122.

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