Prof. Volkmar Dierolf
Lehigh University, USA
Email: vod2@lehigh.edu
Qualifications
1992 Ph.D., Habilitation, Universität Paderborn, Germany
1987 Physics, Diploma (with distinction), University
of Utah, USA
1987 Physics, Diploma (with distinction), Universität
Stuttgart, Germany
Publications(Selected)
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Site Selective Spectroscopy of rare earth ions in gallium nitride
based materials. Chapter 8 in Topics in Applied Physics 124: Rare-Earth Doped
III-Nitrides for Optoelectronic and Spintronic Applications, (ed. K.P.
O'Donnell,V. Dierolf Springer-Verlag, Berlin, Heidelberg, New York), 2010.
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Optical and magneto-optical properties of erbium doped InGaN and
GaN epilayers, N Woodward, V Dierolf, J Lin, H Jiang, J Zavada, Optical
Materials, doi:10.1016/j.optmat.2010.07.007, in print 2010.
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Q. Gan, L. Zhou, V. Dierolf, and FJ Bartoli, Direct mapping
of the UV surface plasmons. Optics Letters 34(9), 1324-6, 2009.
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Growths of staggered InGaN quantum wells light-emitting diodes
emitting at 520-525 nm employing graded growth-temperature profile, H. Zhao, G.
Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N.Tansu,
Appl. Phys. Lett. 95, 061104, 2009.
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Excitation pathways and efficiency of Eu ions in GaN by
site-selective spectroscopy, Z. Fleischman, C. Munasinghe, A. J. Steckl,
A. Wakahara, J. Zavada and V. Dierolf, Appl. Phys B 97 607, 2009.
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Excitation Pathways of Rare Earth Ions by Energetic Electrons V.
Dierolf, S. Penn Tafon, Z. Fleischman, L. Maurer, in Rare-Earth Doping of
Advanced Materials for Photonic Applications, edited by V. Dierolf, Y.
Fujiwara, U. Hommerich, P. Ruterana, J. Zavada (Mater. Res. Soc. Symp. Proc.
Volume 1111, Warrendale, PA), 2009.
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Crystal-field split levels of Nd3+ ions in GaN
measured by luminescence spectroscopy G. Metcalfe, E. Readinger, P. Shen, N.
Woodward, V. Dierolf, M. Wraback, J. Appl. Phys. 105, 053101, 2009.
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Enhanced Room-Temperature Luminescence Efficiency Through Carrier
Localization in AlxGa1–xN Alloys, C. J. Collins, A. V. Sampath, G. A. Garrett,
W. L. Sarney, H. Shen, M. Wraback A. Yu. Nikiforov and G. S. Cargill, III,
andV. Dierolf, Appl. Phys. Lett., 86, 31916-8, 2005.
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Site-selective spectroscopy of Er in GaN, V. Dierolf, C.
Sandmann, J. Zavada, P. Chow, B. Hertog, J. Appl. Phys. 95, 5464-70, 2004.
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V. Dierolf, Electronic Defect States in Alkali Halides:
Effects of Interaction with Molecular Ions, Springer Tracts in Modern
Physics 185 (Springer, Heidelberg, New York), 2003.