[1]
|
Tadatomo, K., Okagawa, H., Ohuchi, Y., Tsunekawa, T., Jyouichi, T., Imada, Y., et al. (2001) High Output Power In-GaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy. Physica Status Solidi (a), 188, 121-125.
http://dx.doi.org/10.1002/1521-396X(200111)188:1<121::AID-PSSA121>3.0.CO;2-G
|
[2]
|
Chang, S.J., Lin, Y.C., Su, Y.K., Chang, C.S., Wen, T.C., Shei, S.C., et al. (2003) Nitride-Based LEDs Fabricated on Patterned Sapphire Substrates. Solid-State Electronics, 47, 1539-1542.
http://dx.doi.org/10.1016/S0038-1101(03)00073-X
|
[3]
|
Feng, Z.H., Qi, Y.D., Lu, Z.D. and Lau, K.M. (2004) GaN-Based Blue Light-Emitting Diodes Grown and Fabricated on Patterned Sapphire Substrates by Metalorganic Vapor-Phase Epitaxy. Journal of Crystal Growth, 272, 327-332.
http://dx.doi.org/10.1016/j.jcrysgro.2004.08.070
|
[4]
|
Kao, C.-C., Su, Y.-K., Hsieh, Y.-T., Lee, Y.-C., Cheng, C.-Y. and Lin, C.-L. (2011) Investigation of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates by Contact-Transferred and Mask-Embedded Lithography. Applied Physics Express, 4, 062102-062104. http://dx.doi.org/10.1143/APEX.4.062102
|
[5]
|
Yamada, M., Mitani, T., Narukawa, Y., Shioji, S., Niki, I., Sonobe, S., et al. (2002) InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode. Japanese Journal of Applied Physics, 41, L1431-L1433. http://dx.doi.org/10.1143/JJAP.41.L1431
|
[6]
|
Yu, S.-F., Chang, S.-P., Chang, S.-J., Lin, R.-M., Wu, H.-H. and Hsu, W.-C. (2012) Characteristics of InGaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates with Various Pattern Heights. Journal of Nanomaterials, 2012.
http://dx.doi.org/10.1155/2012/346915
|
[7]
|
Moram, M.A. and Vickers, M.E. (2009) X-Ray Diffraction of III-Nitrides. Reports on Progress in Physics, 72, Article ID: 036502. http://dx.doi.org/10.1088/0034-4885/72/3/036502
|