has been cited by the following article(s):
[1]
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Investigation of the Electrical Characteristics of Bilayer ZnO/In2O3 Thin-Film Transistors Fabricated by Solution Processing
Materials,
2018
DOI:10.3390/ma11112103
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[2]
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A Compact Drain Current Model for Thin-Film Transistor Under Bias Stress Condition
IEEE Transactions on Electron Devices,
2018
DOI:10.1109/TED.2018.2818694
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[3]
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Numerical simulation of bias and photo stress on indium–gallium–zinc-oxide thin film transistors
Vacuum,
2015
DOI:10.1016/j.vacuum.2015.04.021
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[4]
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Stability improvement of amorphous InGaZnO TFTs by an asymmetric design
Electronics Letters,
2015
DOI:10.1049/el.2015.2036
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[5]
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Stability study of solution-processed zinc tin oxide thin-film transistors
Electronic Materials Letters,
2015
DOI:10.1007/s13391-015-5209-4
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[6]
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Correlation between carrier concentration distribution, I-V and C-V characteristics of a-InGaZnO TFTs
Journal of Display Technology,
2015
DOI:10.1109/JDT.2015.2480871
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[7]
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Effects of negative gate-bias stress on the performance of solution-processed zinc-oxide transistors
Journal of the Korean Physical Society,
2014
DOI:10.3938/jkps.65.330
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