[1]
|
J. M. Yang, J. Liu and J. L. He, “Efficient Diode-Pumped Nd:YVO4 Continuous-Wave Laser at 1. 34 ?m,” Optics, Vol. 115, No. 12, 2004, pp. 538-540.
doi:10.1078/0030-4026-00538
|
[2]
|
H. R. Zhang, M. J. Chao, M. Y. Gao, L. W. Zhang and J. Q. Yao, “High Power Diode Single-End-Pumped Nd: YVO4 Laser,” Optics & Laser Technology, Vol. 35, No. 6, 2003, pp. 445-449. doi:10.1016/S0030-3992(03)00051-3
|
[3]
|
G. P. Agrwal, “Semiconductor lasers,” 2nd Edition, Van Nostrand Reinhold, New York, 1993.
|
[4]
|
W. Streifer, D. R. Scifres, G. L. Hrnagel, D. F. Welch, J. Berger and M. Sakamoto, “Advances in Diode Laser Pumps,” IEEE Journal of Quantum Electronics, Vol. 24, No. 6, 1988, pp. 883-894.
|
[5]
|
D. F. Welch, “A Brief History of High-Power Semiconductor Lasers,” IEEE Journal of Quantum Electronics, Vol. 6, No. 6, 2000, pp. 1470-1477.
|
[6]
|
D. Jaque, J. J. Romero, Y. Huang and Z. D. Luo, “Tunable Green Laser Source Based on Frequency Mixing of Pump and Laser Radiation from a Nd:YVO4 Crystal Operating at 1342 nm with an Intracavity KTP Crystal,” Applied Optics, Vol. 41, No. 30, 2002, pp. 6394-6398.
doi:10.1364/AO.41.006394
|
[7]
|
J. E. Bernard, V. D. Lokhnygin and A. J. Alcock, “Grating-Tuned, Single-Longitudinal-Mode, Diode Pumped Nd:YVO4 Laser,” Optics Letters, Vol. 18, No. 23, 1993, pp. 2020-2023. doi:10.1364/OL.18.002020
|
[8]
|
Y. F. Chen, “Ef?cient Subnanosecond Diode-Pumped Passively Q-Switched Nd:YVO4 Self-Stimulated Raman Laser,” Optics Letters, Vol. 29, No. 11, 2004, pp. 1251-1253. doi:10.1364/OL.29.001251
|
[9]
|
R. Scheps, J. F. Myers and G. Mizell, “High-Effciency 1.06 Micrometer Output in a Monolithic Nd:YVO4 Laser,” Applied Optics, Vol. 33, No. 24, 1994, pp. 5546- 5550. doi:10.1364/AO.33.005546
|
[10]
|
Y. F. Chen, K. F. Huang, S. W. Tsai, Y. P. Lan, S. C. Wang and J. Chen, “Simultaneous Mode Locking in a Diode-Pumped Passively Q-Switched Nd:YVO4 Laser with a GaAs Saturable Absorber,” Applied Optics, Vol. 40, No. 33, 2001, pp. 6038-6041.
doi:10.1364/AO.40.006038
|
[11]
|
J. Liu, B. Ozygus, S. Yang, J. Erhard, U. Seelig, A. Ding, H. Weber, X. Meng, L. Zhu, L. Qin, C. Du, X. Xu and Z. Shao, “Ef?cient Passive Q-Switching Operation of a Di ode-Pumped Nd:GdVO4 Laser with a Cr4+:YAG Saturable Absorber,” Journal of the Optical Society of America B, Vol. 20, No. 4, 2003, pp. 652-661.
doi:10.1364/JOSAB.20.000652
|
[12]
|
J. A. Morris and C. R. Pollock, “Passive Q-Switching of a Diode Pumped Nd:YAG Laser with a Saturable Absorber,” Optics Letters, Vol. 15, No. 8, 1990, pp. 440-442.
doi:10.1364/OL.15.000440
|
[13]
|
R. S. Conroy, T. Lake, G. J. Friel, A. J. Kemp and B. D. Sinclair, “Self Q-Switched Nd:YVO4 Microchip Laser,” Optics Letters, Vol. 23, No. 6, 1998, pp. 457-459.
doi:10.1364/OL.23.000457
|
[14]
|
Y. X. Leng, L. H. Lin, Y. B. Ou and X. K. Wan, “Ab sorption of Excited State of Cr:YAG Crystal,” Acta Optica Sinica, Vol. 21, No. 2, 2001, pp. 225-227.
|
[15]
|
Y. Shimony, Z. Burshtein and B. A. Ben-Amar, “Repetitive Q-Switching of a CW Nd:YAG Laser Using Cr:YAG Saturable Absorber,” IEEE Journal of Quantum Elec tronics, Vol. 32, No. 2, 1996, pp. 305-310.
doi:10.1109/3.481878
|
[16]
|
X. Zhang, S. Zhao and Q. Wang, “Laser Diode Pumped Cr:YAG Passively Q-Switched Nd:S-FAP Laser,” Optics Communications, Vol. 155, No. 1-3, 1998, pp. 55-60.
doi:10.1016/S0030-4018(98)00356-3
|
[17]
|
Z. Ma, D. J. Li, J. C. Gao, N. L. Wu and K. M. Du, “Thermal Effects of the Diode End-Pumped Nd:YVO4 Slab,” Optics Communications, Vol. 275, No. 1, 2007, pp. 179-185. doi:10.1016/j.optcom.2007.03.024
|
[18]
|
J. L. Blows, T. Omatu, J. Dawes, H. Pask and M. Tateda, “Heat Generation in Nd:YVO4 with and without Laser Action,” IEEE Photonics Technology Letters, Vol. 10, No. 12, 1998, pp. 1727-1729. doi:10.1109/68.730483
|
[19]
|
T. Y. Fan, “Heat Generation in Nd:YAG and Yb:YAG,” IEEE Journal of Quantum Electronics, Vol. 29, No. 6, 1993, pp. 1457-1459. doi:10.1109/3.234394
|
[20]
|
Z. Xiong, Z. G. G. Li, N. Moore, W. L. Huang and G. C. Lim, “Detailed Investigation of Thermal Effects in Lon gitudinally Diode-Pumped Nd:YVO4 Lasers,” IEEE Journal of Quantum Electronics, Vol. 39, No. 8, 2003, pp. 979-986. doi:10.1109/JQE.2003.814371
|
[21]
|
W. Koechner, “Solid State Laser Engineering,” 3rd Edition, Spronge-Verlag, Berlin, 1992, pp. 381-413.
|
[22]
|
A. M. Samy, A. F. El-Sherif, A. M. Mokhtar and M. F. Hassan, “Simulation and Analysis of a High Power Diode-End-Pumped Nd:YVO4 Solid-State Laser,” Proceedings of 4th International Conference on Engineering Mathematics and Physics, Cairo, May 2008, pp. 231-241.
|
[23]
|
A. F. El-Sherif, M. F. Hassan, A. M. Mokhtar and A. M. Samy, “Characterization of a 808 nm High Power Diode Laser Module,” Proceedings of 4th International Conference on Engineering Mathematics and Physics, Cairo, May 2008, pp. 242-251.
|
[24]
|
D. Jaque, J. J. Romero, Y. Huang and Z. D. Luo, “Tunable Green Laser Source Based on Frequency Mixing of Pump and Laser Radiation from a Nd:YVO4 Crystal Operating at 1342 nm with an Intracavity KTP Crystal,” Applied Optics, Vol. 41, No. 30, 2002, pp. 6394-6398.
doi:10.1364/AO.41.006394
|
[25]
|
J. E. Bernard, V. D. Lokhnygin and A. J. Alcock, “Grating-Tuned, Single-Longitudinal-Mode, Diode-Pumped Nd:YVO4 Laser,” Optics Letters, Vol. 18, No. 23, 1993, pp. 2020-2023. doi:10.1364/OL.18.002020
|
[26]
|
Y. F. Chen, “Ef?cient Subnanosecond Diode-Pumped Passively Q-Switched Nd:YVO4 Self-Stimulated Raman Laser,” Optics Letters, Vol. 29, No. 11, 2004, pp. 1251 1253. doi:10.1364/OL.29.001251
|
[27]
|
R. Scheps, J. F. Myers and G. Mizell, “High-Efficiency 1.06-Micrometer Output in a Monolithic Nd:YVO4 Laser,” Applied Optics, Vol. 33, No. 24, 1994, pp. 5546 5550. doi:10.1364/AO.33.005546
|
[28]
|
Y. F. Chen, K. F. Huang, S. W. Tsai, Y. P. Lan, S. C. Wang and J. Chen, “Simultaneous Mode Locking in a Diode-Pumped Passively Q-Switched Nd:YVO4 Laser with a GaAs Saturable Absorber,” Applied Optics, Vol. 40, No. 33, 2001, pp. 6038-604.
doi:10.1364/AO.40.006038
|
[29]
|
J. Liu, B. Ozygus, S. Yang, J. Erhard, U. Seelig, A. Ding, H. Weber, X. Meng, L. Zhu, L. Qin, C. Du, X. Xu and Z. Shao, “Efficient Passive Q-Switching Operation of a Diode-Pumped Nd:GdVO4 Laser with a Cr4+:YAG Saturable Absorber,” Journal of the Optical Society of America B, Vol. 20, No. 4, 2003, pp. 652-661.
doi:10.1364/JOSAB.20.000652
|
[30]
|
J. A. Morris and C. R. Pollock, “Passive Q-Switching of a Diode-Pumped Nd:YAG Laser with a Saturable Ab sorber,” Optics Letters, Vol. 15, No. 8, 1990, pp. 440-442.
doi:10.1364/OL.15.000440
|
[31]
|
R. S. Conroy, T. Lake, G. J. Friel, A. J. Kemp and B. D. Sinclair, “Self Q-Switched Nd:YVO4 Microchip Laser,” Optics Letters, Vol. 23, No. 6, 1998, pp. 457-459.
doi:10.1364/OL.23.000457
|
[32]
|
Z. Zalevsky, Y. Kapellner, I. Eyal and N. Cohen, “Self Q-Switching Effect in a Nd:YVO4/KTP Lasing Unit,” Optical Engineering, Vol. 45, No. 7, 2006, Article ID: 070506.
|