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An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and microwave power applications
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2022 Second International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT),
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Performance Projection of GaN HEMT: Experimental Verification Using Angelov Model
2022 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE),
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Modeling of access resistances and channel temperature estimation for GaN HEMT
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Comparative studies on the DC and RF performances of conventional HEMT and double quantum well heterostructure
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2021
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Performance Projection of GaN HEMT: Experimental Verification Using Curtice Model
2021 International Conference on Electronics, Communications and Information Technology (ICECIT),
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Energy Systems in Electrical Engineering,
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2020 IEEE 2nd International Conference on Electronics, Control, Optimization and Computer Science (ICECOCS),
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Reproducing GaN HEMT Kink Effect by Simulating Field-Enhanced Barrier Defect Ionization
IEEE Transactions on Electron Devices,
2019
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Effect of mole fraction, doping concentration and gate length on the electrical characteristics of nanoelectronic High Electron Mobility Transistor
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Sensitive and Selective Detection of Pb2+ Ions Using 2,5-Dimercapto-1,3,4-Thiadiazole Functionalized AlGaN/GaN High Electron Mobility Transistor
IEEE Electron Device Letters,
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Comparative Study Between AlGaN/GaN and AlInN/GaN High Electron Mobility Transistors
2018 10th International Conference on Electrical and Computer Engineering (ICECE),
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Threshold Voltage Improvement of Enhancement-Mode Al2O3/ AIGaN/GaN MIS-HEMT with High Drain Current Density
2018 10th International Conference on Electrical and Computer Engineering (ICECE),
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Analytical Modeling and Simulation-Based Investigation of AlGaN/AlN/GaN Bio-HEMT Sensor for C-erbB-2 Detection
IEEE Sensors Journal,
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2018 2nd International Conference on Electronics, Materials Engineering & Nano-Technology (IEMENTech),
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2017 IEEE Applied Power Electronics Conference and Exposition (APEC),
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An accurate compact model for gallium nitride gate injection transistor for next generation of power electronics design
2017 IEEE 18th Workshop on Control and Modeling for Power Electronics (COMPEL),
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Modelling and comparison of Si-MOSFET and eGaN-HEMT for power converter applications using TCAD
2017 2nd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT),
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Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in terms of mobility and subthreshold slope
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A DC analytical AlGaN/GaN HEMT model for transistor characterisation
2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON),
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2016 5th International Conference on Informatics, Electronics and Vision (ICIEV),
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A physics-based compact device model for GaN HEMT power devices
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA),
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Characterization and comparison between Ig(Vgs) structures HEMT AlInN/GaN and AlGaN/GaN
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Performance analysis of 20 nm gate-length In0.2Al0.8N/GaN HEMT with Cu-gate having a remarkable highION/IOFFratio
Journal of Semiconductors,
2014
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Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices
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2014
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Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices
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2013
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