"XRD Characterization of AlN Thin Films Prepared by Reactive RF-Sputter Deposition"
written by N. Matsunami, H. Kakiuchida, M. Sataka, S. Okayasu,
published by Advances in Materials Physics and Chemistry, Vol.3 No.1A, 2013
has been cited by the following article(s):
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[11] Distinctions of the growth and structural-spectroscopic investigations of thin AlN films grown on the GaAs substrates
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[12] Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
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[13] Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates
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[14] Growth of heteroepitaxial aluminium nitride films on aluminium oxide substrates via PEALD method
[15] Growth of Mn-doped ZnO thin films by rf-sputter deposition and lattice relaxation by energetic ion impact
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[16] Growth and Characterization of Aln Thin Film Deposited by Sol-Gel Spin Coating Techniques
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[17] Surface characterization and luminescence properties of AlN doped with RE elements (Sm, Ho, Gd, Tm)
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