"Improved Evaluation Method for the SRAM Cell Write Margin by Word Line Voltage Acceleration"
written by Hiroshi Makino, Naoya Okada, Tetsuya Matsumura, Koji Nii, Tsutomu Yoshimura, Shuhei Iwade, Yoshio Matsuda,
published by Circuits and Systems, Vol.3 No.3, 2012
has been cited by the following article(s):
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