Author(s)

Raied K. Jamal, Mohammed T. Hussein, Abdulla M. Suhail

Department of physics, College of science, University of Baghdad, Baghdad, Iraq.

The three-photon absorption (3PA) in nanostructure wide-band gap ZnO semiconductor material is observed under high intensity femtosecond Titanium-Sapphire laser of 800 nm wavelength excitation. The ZnO film was prepared by chemical spray pyrolysis technique with substrate temperature of 400℃. The optical properties concerning the absorp-tion, transmission, reflection, Raman and the photoluminescence spectra are studied for the prepared film. The structure of the ZnO film was tested with the X-Ray diffraction and it was found to be a polycrystalline with recognized peaks oriented in (002), and (102). The measured of three photon absorption coefficient was found to be about 0.0166 cm³/Gwatt², which is about five times higher than the bulk value. The fully computerized z-scan system was used to measure the nonlinear coefficients from the Gaussian fit of the transmitted laser incident.

Multiphoton Processes; ZnO Nanocrystalline; Nonlinear Optics

R. Jamal, M. Hussein and A. Suhail, "Three-Photon Absorption in Zno Film Using Ultra Short Pulse Laser," Journal of Modern Physics, Vol. 3 No. 8, 2012, pp. 856-864. doi: 10.4236/jmp.2012.38112.