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Affiliation
ISSN
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Deep Traps and Parasitic Effects in Al
0.25
Ga
0.75
N/GaN/SiC Heterostructures with Different Schottky Contact Surfaces
(Articles)
Salah Saadaoui
,
Olfa Fathallah
,
Mohamed Mongi Ben Salem
,
Christophe Gaquière
,
Hassen Maaref
Open Access Library Journal
Vol.2 No.8
,August 27, 2015
DOI:
10.4236/oalib.1101562
961
Downloads
1,302
Views
Citations
Characteristics of AlGaN/GaN HEMTs for Detection of MIG
(Articles)
Hasina F. Huq
,
Hector Trevino II
,
Jorge Castillo
Journal of Modern Physics
Vol.7 No.13
,September 23, 2016
DOI:
10.4236/jmp.2016.713154
1,455
Downloads
2,553
Views
Citations
Electrical Characterization of Traps in AlGaN/GaN FAT-HEMT’s on Silicon Substrate by C-V and DLTS Measurements
(Articles)
M. Charfeddine
,
Malek Gassoumi
,
H. Mosbahi
,
C. Gaquiére
,
M. A. Zaidi
,
H. Maaref
Journal of Modern Physics
Vol.2 No.10
,October 20, 2011
DOI:
10.4236/jmp.2011.210152
7,396
Downloads
15,472
Views
Citations
2-D Theoretical Model for Current–Voltage Characteristics in AlGaN/GaN HEMT’s
(Articles)
Manel Charfeddine
,
Hafedh Belmabrouk
,
Mohamed Ali Zaidi
,
Hassen Maaref
Journal of Modern Physics
Vol.3 No.8
,August 15, 2012
DOI:
10.4236/jmp.2012.38115
9,158
Downloads
14,909
Views
Citations
Analytical Evaluation of Energy and Electron Concentrations in Quantum Wells of the High Electron Mobility Transistors
(Articles)
Salih Saygi
Open Journal of Applied Sciences
Vol.4 No.3
,March 11, 2014
DOI:
10.4236/ojapps.2014.43014
3,202
Downloads
4,680
Views
Citations
Modeling of Noise Power Spectral Density Analysis for GaN/AlGaN HEMT
(Articles)
Palanichamy Vimala
,
L. Vidyashree
Journal of Applied Mathematics and Physics
Vol.4 No.10
,October 25, 2016
DOI:
10.4236/jamp.2016.410193
1,266
Downloads
2,089
Views
Citations
This article belongs to the Special Issue on
Computational Physics and Its Applications
Characteristics of GaN Thin Films Using Magnetron Sputtering System
(Articles)
Hasina F. Huq
,
Rocio Y. Garza
,
Roman Garcia-Perez
Journal of Modern Physics
Vol.7 No.15
,November 9, 2016
DOI:
10.4236/jmp.2016.715178
1,601
Downloads
2,507
Views
Citations
A Novel High Performance of GaN-Based HEMT with Two Channel Layers of GaN/InAlGaN
(Articles)
Reza Karami
,
Masoud Sabaghi
,
Massoud Masoumi
World Journal of Engineering and Technology
Vol.5 No.2
,May 27, 2017
DOI:
10.4236/wjet.2017.52026
1,332
Downloads
2,361
Views
Citations
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