Author(s)

Kien-Wen Sun, Ting-Yuan Fan

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We demonstrated techniques toward nanoscale thermometries by using a hydrothermally prepared single Sb2Se3 nanowire. Suitable electrodes were fabricated to make electrical contact with a nanowire on a silicon substrate by combining techniques of dielectrophoresis, electron beam (e-beam) lithography, and focused ion beam (FIB). Measurements of temperature-dependent electrical resistivity were carried out from room temperature up to 525 K. The current-voltage characteristics showed linear and symmetric behavior through the entire temperature range, which indicated that the contacts are ohmic. The resistance of the single Sb2Se3 nanowire decreased with increasing temperature. However, a larger thermal activation energy of ~ 4.2 eV was found near a temperature above 420 K. We speculate that the reduction of resistance at a higher temperature was due to the breakdown of grain boundary barriers.

Nanowire, Dielectrophoresis, E-Beam Lithography

K. Sun and T. Fan, "Temperature Dependence of Current-Voltage Characteristics in Individual Sb2Se3 Nanowire," Materials Sciences and Applications, Vol. 1 No. 1, 2010, pp. 8-12. doi: 10.4236/msa.2010.11002.