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Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: Electric Equivalent Circuits

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DOI: 10.4236/wjcmp.2014.42013    3,966 Downloads   5,717 Views   Citations

ABSTRACT

In this paper, a theory on the determination of the diffusion coefficient of excess minority carriers in the base of a silicon solar cell is presented. The diffusion coefficient expression has been established and is related to both frequency modulation and applied magnetic field; the study is then carried out using the impedance spectroscopy method and Bode diagrams. From the diffusion coefficient, we deduced the diffusion length and the minority carriers’ mobility. Electric parameters were derived from the diffusion coefficient equivalent circuits.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

Diao, A. , Thiam, N. , Zoungrana, M. , Sahin, G. , Ndiaye, M. and Sissoko, G. (2014) Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: Electric Equivalent Circuits. World Journal of Condensed Matter Physics, 4, 84-92. doi: 10.4236/wjcmp.2014.42013.

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