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The Effect of Deposition Temperature of Pb(Zr,Ti)O3(PZT)Thin Films with Thicknesses of around 100 nm on the Piezoelectric Response for Nano Storage Applications

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DOI: 10.4236/wjcmp.2012.22009    3,531 Downloads   6,854 Views   Citations
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ABSTRACT

We investigated the effect of the deposition temperature of PZT thin films with thicknesses of around 100 nm on the piezoelectric response using an atomic force microscope (AFM). The preferred orientation of the PZT thin film was changed from (001) to (110) as the deposition temperature increased. The surface roughness of PZT thin films decreased with the increase of deposition temperature. The maximum amplitude of the piezoelectric response of PZT thin films decreased till the deposition temperature increased to 350°C. This tendency seems to be due to the change of the preferred orientation form (001) to (110). At over 450°C, this maximum value decreased due to both the increase of the surface roughness and the degradation of the crystallinity.

Conflicts of Interest

The authors declare no conflicts of interest.

Cite this paper

W. Han, "The Effect of Deposition Temperature of Pb(Zr,Ti)O3(PZT)Thin Films with Thicknesses of around 100 nm on the Piezoelectric Response for Nano Storage Applications," World Journal of Condensed Matter Physics, Vol. 2 No. 2, 2012, pp. 51-56. doi: 10.4236/wjcmp.2012.22009.

References

[1] T. Tani and D. A. Payne, “Lead Oxide Coatings on Sol-Gel-Derived Lead Lanthanum Zirconium Titanate Thin Layers for Enhanced Crystallization into the Perovskite Structure,” Journal of the American Ceramic Society, Vol. 77, No. 5, 1989, pp. 1242-1248. doi:10.1111/j.1151-2916.1994.tb05398.x
[2] W. Zhu, R. W. Vest, M. S. Tse, M. K. Rao and Z .Q. Liu, “Characteristics of Ferroelectric 60/40 PZT Films Deposited by Metallo-Organic Decomposition Technology for Memory Application,” Journal of Materials Science: Materials in Electronics, Vol. 5, No. 3, 1994, pp. 173-179. doi:10.1007/BF01198950
[3] R. N. Castellano and L. G. Feinstein, “Lon-Beam Deposition of Thin Films of Ferroelectric Lead Zirconate Titanate (PZT),” Journal of Applied Physics, Vol. 50, No. 6, 1979, pp. 4406-4411. doi:10.1063/1.326430
[4] M. Okuyama, Y. Tagani and Y. Hamakawa, “Microwave Effect in RF Magnetron Sputtering of PbTiO3,” Applied Surface Science, Vol. 33-34, 1988, pp. 625-631. doi:10.1016/0169-4332(88)90361-3
[5] S. B. Krupanidhi, N. Maffei, M. Sayer and K. El-Assal, “RF Planar Magnetron Sputtering and Characterization of Ferroelectric Pb(Zr,Ti)O3 Films,” Journal of Applied Physics, Vol. 54, No. 11, 1983, pp. 6601-6609. doi:10.1063/1.331895
[6] T. Hidaka, T. Maruyama, I. Sakai, M. Saitoh, L. A. Wills, R. Hiskes, S. A. Dicarolis, J. Amano and C. M. Foster, “Characteristics of PZT Thin Films as Ultra-High Density Recording Media,” Integrated Ferroelectrics, Vol. 17, No. 1-4, 1997, pp. 319-327. doi:10.1080/10584589708013006
[7] S. Hong, E. L. Colla, E. Kim, D. V. Taylor, A. K. Tagantsev, P. Muralt, K. No and N. Setter, “High Resolution Study of Domain Nucleation and Growth During Polarization Switching in Pb(Zr,Ti) O3 Ferroelectric Thin Film Capacitors,” Journal of Applied Physics, Vol. 86, No. 1, 1999, pp. 607-613. doi:10.1063/1.370774
[8] JCPDS International Centre for Diffraction Data No. 33-784.
[9] S. Kalpat and K. Uchino, “Highly Oriented Lead Zirconium Titanate Thin Films: Growth, Control of Texture, and Its Effect on Dielectric Properties,” Journal of Applied Physics, Vol. 90, No. 6, 2001, pp. 2703-2711. doi:10.1063/1.1385580
[10] M. Shimizu, M. Sugiyama, H. Fujisawa and T. Shiosaki, “Control of Orientation of Pb(Zr,Ti) O3 Thin Films Using PbTiO3 Buffer Layer,” Japanese Journal of Applied Physics, Vol. 33, 1994, pp. 5167-5171. doi:10.1143/JJAP.33.5167
[11] J. K. Yang, W. S. Kim and H.-H. Park, “The Effect of Excess Pb Content on the Crystallization and Electrical Properties in Sol-Gel Derived Pb(Zr0.4Ti0.6)O3 Thin Films,” Thin Solid Films, Vol. 377-378, 2000, pp. 739- 744. doi:10.1016/S0040-6090(00)01325-0
[12] E. Sato, Y. Huang, M. Kosec, A. bell and N. Setter, “Lead Loss, Preferred Orientation, and the Dielectric Properties of Sol-Gel Prepared Lead Titanate Thin Films,” Applied Physics Letters, Vol. 65, No. 21, 1994, pp. 2678-2680. doi:10.1063/1.112600
[13] D. V. Taylor and D. Damjanovic, “Piezoelectric Properties of Rhombohedral Pb(Zr,Ti) O3 Thin Films with (100), (111), and Random Crystallographic Orientation,” Applied Physics Letters, Vol. 76, No. 12, 2000, pp. 1615- 1618. doi:10.1063/1.126113

  
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