"
Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation"
written by Tetsuji Arai, Kazuki Kamimura, Chiaya Yamamoto, Mai Shirakura, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Toshiyuki Takamatsu, Masaaki Ogino, Masaaki Tachioka, Haruo Nakazawa,
published by
Journal of Materials Science and Chemical Engineering,
Vol.5 No.1, 2017
has been cited by the following article(s):
[1]
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STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon
Journal of Materials Science and Chemical Engineering,
2017
DOI:10.4236/msce.2017.51014
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