TITLE:
Nonequilibrium Diffusion of Boron in SiC at Low Temperatures
AUTHORS:
Iikham G. Atabaev, Tojiddin M. Saliev, Erkin N. Bakhranov, Dilmurad Saidov, Khimmatali Juraev, Chin C. Tin, Victor Adedeji, Bakhtiyar G. Atabaev, Nilufar G. Saidkhanova
KEYWORDS:
Diffusion, Activation Energy, Silicone Carbide, Annealing, Vacancy
JOURNAL NAME:
Materials Sciences and Applications,
Vol.1 No.2,
June
30,
2010
ABSTRACT: Nonequilibrium diffusion of Boron in 3C SiC was performed using a flow of carbon vacancies. The temperature of diffusion was 1150-1250℃ and concentration of Boron in doped area reached about 1019 to 1020 cm-3. It is shown that after thermal annealing in vacuum the characteristics of fabricated structures are close to those of the structures made by the conventional technology.