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W. Feng, R. Hettiarachchi1, S. Sato, K. Kakushima, M. Niwa, H. Iwai, K. Yamada and K. Ohmoril, “Advantages of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties,” Japanese Journal of Applied Physics, Vol. 51, No. 4, 2012, Article ID: 04DC06.
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