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Materials Sciences and Applications
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Materials Sciences and Applications
ISSN Print:
2153-117X
ISSN Online:
2153-1188
www.scirp.org/journal/msa
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msa@scirp.org
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"
Investigation by AES, EELS and TRIM Simulation Method of InP(100) Subjected to He
+
and H
+
Ions Bombardment
"
written by
Mohamed Ghaffour, Abdellaoui Abdellaoui, Abdellah Ouerdane, M'Hammed Bouslama, Christian Jardin
,
published by
Materials Sciences and Applications
,
Vol.2 No.5, 2011
has been cited by the following article(s):
Google Scholar
CrossRef
[1]
Croissance, structure atomique et propriétés électroniques de couches minces de Bismuth sur InAs (100) et sur InAs (111)
Thesis
,
2015
[2]
Croissance, structures atomiques et propriétés électroniques de couches minces de bismuth sur InAs (100) et sur InAs (111)
Thèse
,
2015
[3]
Experimental Analysis of InP and p-ZnO/InP compounds for optoelectronic applications.
Null
,
2013
No relevant information.
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