A. Stesmans and V. V. Afanas’ev, “Si Dangling- Bond-Type Defects at the Interface of Si(100) with Ultrathin Layers of SiOx, Al2O3, and ZrO2,” Applied Physics Letters, Vol. 80, No. 11, 2002, pp. 1957-1959. doi:10.1063/1.1448169

has been cited by the following article:

• TITLE: Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)

  AUTHORS: Vijay Ramkrishna Chinchamalatpure, Sunil Madhavrao Chore, Shikant Sahebrao Patil, Gajanan Niranjan Chaudhari

  KEYWORDS: Sol-Gel Technique; ZrO2 Thin Film; C –V; I-V

  JOURNAL NAME: Journal of Modern Physics, Vol.3 No.1, January 4, 2012

  ABSTRACT: The ZrO2 thin films deposited on Si (100) were successfully synthesized by solgel process and deposited by using spin-coating technique.The structural properties of ZrO2 thin films were investigated by X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Fourier Transform Infrared Spectroscopy (FT-IR), and electrical properties were studied by conventional techniques like Capacitance-Voltage (C-V) measurement and Current–Voltage (I–V) measurement. The XRD of ZrO2 films shows the films crystallized and exists in two phases at 700℃ calcinations temperature. The C–V characteristics of all the dielectric films that involved distinct inversion, depletion, and accumulation were clearly revealed in MIS structure. I-V characteristics of ZrO2 thin films on Si shows decreased saturation current on calcinations temperatures. The XPS measurement reveals that a zirconium silicate interfacial layer has formed in the ZrO2/Si Systems.