Bunning, J.M., Samantilleke, A., et al. (2005) Effects of Multi-Defects at Metal/Semi-conductor Interfaces on Electrical Properties and Their Influence on Stability and Lifetime of Thin Film Solar Cells. Solar Energy Materials and Solar Cells, 86, 373-384.
https://doi.org/10.1016/j.solmat.2004.08.009

has been cited by the following article:

• TITLE: Effect of Defects at the Buffer Layer CdS/Absorber CIGS Interface on CIGS Solar Cell Performance

  AUTHORS: Boureima Traoré, Soumaïla Ouédraogo, Marcel Bawindsom Kébré, Daouda Oubda, Issiaka Sankara, Adama Zongo, François Zougmoré

  KEYWORDS: Numerical Simulation, CdS/CIGS Interface, Interface Defects, Conduction Band Offset (CBO), Surface Defect Layer (SDL)

  JOURNAL NAME: Advances in Chemical Engineering and Science, Vol.13 No.4, September 28, 2023

  ABSTRACT: This scientific paper presents a study investigating the effects of defects at the CdS/CIGS and CdS/SDL interfaces on the performance of CIGS solar cells. The objective of this study is to analyze the influence of defects at the interface between the CdS buffer layer and the CIGS absorber, as well as the surface defect layer (SDL), on CIGS solar cell performance. The study explores three key aspects: the impact of the conduction band offset (CBO) at the CdS/CIGS interface, the effects of interface defects and defect density on performance, and the combined influence of CBO and defect density at the CdS/ SDL and SDL/CIGS interfaces. For interface defects not exceeding 1013 cm-2, we obtained a good efficiency of 22.9% when -0.1 eV analyzing the quality of CdS/SDL and SDL/CIGS junctions, it appears that defects at the SDL/CIGS interface have very little impact on the performances of the CIGS solar cell. By optimizing the electrical parameters of the CdS/SDL interface defects, we achieved a conversion efficiency of 23.1% when -0.05 eV