TITLE:
Dopant Implantation into the Silicon Substrate with Non-Planar Surface
AUTHORS:
Gennady A. Tarnavsky, Evgenii V. Vorozhtsov
KEYWORDS:
Computer Modeling, Silicon Doping, Implantation, Donor, Acceptor Dopants
JOURNAL NAME:
Energy and Power Engineering,
Vol.2 No.2,
May
28,
2010
ABSTRACT: The influence of technological process parameters (aiming angle and implantation energy) on the distributions of dopant concentrations in a silicon substrate is investigated by computer modeling.