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Lee, G.-H., Cui, X., Kim, Y.D., Arefe, G., Zhang, X., Lee, C.-H., et al. (2015) Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage. ACS Nano, 9, 7019-7026. https://doi.org/10.1021/acsnano.5b01341

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