TITLE:
Theoretical D* Optimization of N+-p Pb1-xSnxSe Long-Wavelength (8 - 11 μm) Photovoltaic Detector at 77 K
AUTHORS:
Binbin Weng, Jijun Qiu, Lihua Zhao, Caleb Chang, Zhisheng Shi
KEYWORDS:
Pb1-xSnxSe; Lifetime; Resistant-Area Product; Quantum Efficiency; Detectivity
JOURNAL NAME:
Detection,
Vol.2 No.1,
March
28,
2014
ABSTRACT: In this work, the study of the influences of lifetime, doping concentration and absorption layer thickness to resistant-
area product (R0A) and quantum efficiency of Pb1-xSnxSe photovoltaic detector are presented. Three
fundamental current mechanisms including diffusion, generation-recombination, and tunneling models are considered.
Using optimal doping concentration and absorption layer thickness parameters, the calculated detectivity
(D*) of Pb1-xSnxSe photovoltaic detector is over 1012 cm Hz1/2/W.