[1]
|
[1] B. R. Bennett, R. Magno, J. B. Boos, et al., “Antimo-nide-Based Compound Semiconductors for Electronic Devices: A Review,” Solid-State Electronics, Vol. 49, No. 12, 2005, pp. 1875-1895.
|
[2]
|
M. Razeghi, “Overview of Antimonide Based III-V Semiconductor Epitaxial Layers and Their Applications at the Center for Quantum Devic-es,” The European Physical Journal Applied Physics, Vol. 23, No. 3, 2003, pp. 149-205.
|
[3]
|
A. H. Kroemer, “The 6.1 ? family (InAs, GaSb, AlSb) and its Heterostructures: a Selective Review,” Physica E, Vol. 20, No. 3-4, 2004, pp. 196-203.
|
[4]
|
R. M. Biefeld, “The Metal-Organic Chemical Vapor Deposition and Properties of III-V An-timony-Based Semiconductor Materials,” Materials Science and Engineering R, Vol. 36, No. 4, 2002, pp. 105-142.
|
[5]
|
C. A. Wang, “Progress and Continuing Challenges in Gasb-Based III-V Alloys and Heterostruc-tures Grown by Organometallic Vapor-Phase Epitaxy,” Journal of Crystal Growth, Vol. 272, No. 1-4, 2004, pp. 664-681.
|
[6]
|
A. Rogalshi, “Material Considerations for Third Generation Infrared Photon Detectors,” Infrared Physics & Technology, Vol. 50, No. 2-3, 2007, pp. 240-252.
|
[7]
|
O. Nesher and P. C. Klipstein, “High-Performance IR Detectors at SCD Present and Fu-ture,” Opto-Electronics Review, Vol. 14, No. 1, 2006, pp. 61-70.
|
[8]
|
M. G. Mauk and V. M. Andreev, “Gasb-Related Materials for TPV Cells,” Semiconductor Science and Technology, Vol. 18, No. 5, 2003, pp. S191-S201.
|
[9]
|
M. Rosker and J. Shah, “DARPA’s Program on Antimonide Based Compound Semiconduc-tors (ABCS),” IEEE GaAs Digest, 2003, p. 293.
|
[10]
|
H. Toyota, T. Sasaki and Y. Jinbo, “Growth and Characteri-zation of Gasb/Algasb Multi-Quantum Well Structures on Si (0 0 1) Substrates,” Journal of Crystal Growth, Vol. 310, No. 1, 2008, pp. 78-82.
|
[11]
|
K. Zaima, R. Hasimoto, M. Ezaki, et al., “Dislocation Reduction of Gasb on Gaas by Metalorganic Chemical Vapor Deposition with Epi-taxial Lateral Overgrowth,” Journal of Crystal Growth, Vol. 310, No. 23, 2008, pp. 4843-4845.
|
[12]
|
T. Ashley, L. Buckle,G. W. Smith, et al., ”Dilute Antimonide Ni-trides for Very Long Wavelength Infrared Applications,” Proceedings of SPIE, Orlando, 17 May 2006, pp. 62060L.
|
[13]
|
P. H. Jefferson, L. Buckle , B. R. Bennett, et al., “Growth of Dilute Nitride Alloys of Gainsb Lat-tice-Matched to Gasb,” Journal of Crystal Growth, Vol. 304, No. 2, 2007, pp. 338-341.
|
[14]
|
D. Jackrel, A. Ptak, B. Seth, et al., “Gainnassb Solar Cells Grown by Mole-cular Beam Epitaxy,” IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, 2006, pp. 783-786.
|
[15]
|
J. B. Hacker, J. Bergman, G. Nagy, et al., “An Ultra- Low Power Inas/Alsb HEMT W-Band Low-Noise Amplifier,” IEEE MTT-S International Mi-crowave Symposium, June 2005, pp. 1029-1032.
|
[16]
|
M. K. Kwang, H. S. Jung, E. K. Dong, et al., “The Growth of a Low Defect Inas HEMT Structure on Si by Using an Algasb Buffer Layer Containing Insb Quantum Dots for Dislocation Termination,” Nanotechnology, Vol. 20, No. 22, 2009, p. 225201.
|
[17]
|
A. Rogalski. “New Material Systems for Third Generation Infrared Photo Detectors,” Opto-Electron Review, Vol. 16, No. 4, 2008, pp. 458-482.
|
[18]
|
M. Walther, R. Rehm, J. Schmitz, et al., “Antimony- Based Superlattices for High-Performance Infrared Imag- ers,” Proceedings of SPIE, Orlandoof, 17 March 2008, pp. 69400A-69400A-8.
|
[19]
|
E. Corbin, M. J. Shaw, M. R. Kitchin, et al., “Systematic Study of Type II Ga1?Xinxsb/Inas Superlattices for Infra-Red Detection in the 10-12 ΜM Wavelength Range,” Semiconductor Science and Technology, Vol. 16, No. 4, 2001, pp. 263-272.
|
[20]
|
C. J. Hill, J. V. Li, J. M. Mumolo, et al., “MBE Grown Type-II MWIR and LWIR Superlattice Photodiodes,” Infrared Physics & Technology, Vol. 50, No. 2-3, 2007, pp. 187-190.
|
[21]
|
E. H. Aifer, J. G. Tischler, J. H. Warner, et al., “Dual Band LWIR/VLWIR Type-II Superlattice Photodiodes,” Proceedings of SPIE, Orlando, 28 March 2005, Vol. 5783, pp. 112-122.
|
[22]
|
M. Münzberg, R. Breiter, W. Cabanski, et al., “Inas/Gasb Type-II Short-Period Superlattices for Advanced Single And Dual-Color Focal Plane Arrays,” Proceedings of SPIE, Orlando, 9 April 2007, Vol. 6542, p. 654206.
|
[23]
|
Y. G. Zhang, Y. L. Zheng, C. Lin, et al., “Continuous Wave Performance and Tunability of MBE Grown 2.1 μM Ingaassb/Algaassb MQW Lasers,” Chinese Physics Letters, Vol. 23, No. 8, 2006, pp. 2262-2265.
|
[24]
|
A. Bauer, F. Langer, M. Dallner, et al., “Emission Wavelength Tuning of Interband Cascade Lasers in the 3-4 μM Spectral Range,” Applied Physics Letters, Vol. 95, No. 25, 2009, p. 251103.
|
[25]
|
W. W. Bewley, J. R. Lindle, C. S. Kim, et al., “Lifetimes and Auger Coefficients in Type-II W Interband Cascade Las-ers,” Applied Physics Letters, Vol. 93, No. 4, 2008, p. 041118.
|
[26]
|
N. Yamamoto, “Next-Generation Optical Communications through Nanotechnology,” NICT News, Vol. 353, 2005, pp. 3-4.
|
[27]
|
C. J. Hill and R. Q. Yang, “MBE Growth Optimization of Sb-Based Interband Cas-cade Lasers,” Journal of Crystal Growth, Vol. 278, No. 1-4, 2005, pp. 167-172.
|
[28]
|
A. H?rk?nen, M. Guina, O. Okhotnikov,et al., “1-W Antimonide-Based Vertical Ex-ternal Cavity Surface Emitting Laser Operating At 2-ΜM,” Optics Express, Vol.14, No. 14, 2006, pp. 6479-6484.
|
[29]
|
A. Ducanchez, L. Cerutti, P. Grech, et al., “Room Temperature Continuous Wave Operation of Electrically-Inje- cted Sb-Based RC-LED Emitting Near 2.3 ΜM,” Superlattices and Microstructures, Vol. 44, No. 1, 2008, pp. 62-69.
|