G. Z. Mashanovich, M. M. Milosevic, M. N. Nedeljkovic, N. Owens, B. Xiong, E. J. Teo and Y. Hu, “Low Loss Silicon Waveguides for The Mid-Infrared,” Optic Express, Vol. 19, No. 8, 2011, pp. 7112-7119. doi:10.1364/OE.19.007112

has been cited by the following article:

• TITLE: FDTD Simulation of Three Photon Absorption and Realization of NAND Gate with GaAs Wire Waveguide

  AUTHORS: Ivy Dutta, Anirban Roy Chowdhury, Dharmadas Kumbhakar

  KEYWORDS: Three Photon Absorption; Fifth Order Nonlinearity; FDTD; Full Vector Finite Difference Method; Pump Beam and Probe Beam

  JOURNAL NAME: Optics and Photonics Journal, Vol.3 No.5, August 26, 2013

  ABSTRACT: GaAs has high three photon absorption (3PA) co-efficient at mid-infrared wavelength like2.2mm and waveguides can be formed with this material like silicon nano-wires. It is shown that three-photon-absorption in GaAs wire waveguide can be utilized to form NAND gate. Three-photon-absorption is incorporated in one-dimensional Finite Difference Time Domain (FDTD) equations. The evolution of a probe pulse under the influence of a pump pulse through crossabsorption in a waveguide is investigated using FDTD simulation, where the dominant process is nonlinear three-photon-absorption. Output probe power dependence on input pump power shows that GaAs waveguide NAND gate has higher extinction ratio in comparison to NAND gate using two-photon-absorption in silicon waveguide.