Tripathy, S., Lin, V.K.X., Dolmanan, S.B., Tan, J.P.Y., Kajen, R.S., Bera, L.K., Teo, S.L., Kumar, M.K., Arulkumaran, S., Ng, G.I., Vicknesh, S., Todd, S., Wang, W.Z., Lo, G.Q., Li, H., Lee, D. and Han, S. (2012) AlGaN/GaN Two-Dimensional Electron Gas Heterostructures on 200mm Diameter Si(111). Applied Physics Letters, 101, Article ID: 082110.
https://doi.org/10.1063/1.4746751

has been cited by the following article:

• TITLE: A Novel High Performance of GaN-Based HEMT with Two Channel Layers of GaN/InAlGaN

  AUTHORS: Reza Karami, Masoud Sabaghi, Massoud Masoumi

  KEYWORDS: Mole Fraction, GaN/InAlGaN, Breakdown Voltage, High Electron Mobility Transistor (HEMT)

  JOURNAL NAME: World Journal of Engineering and Technology, Vol.5 No.2, May 27, 2017

  ABSTRACT: The potential impact of GaN-based high electron mobility transistor (HEMT) with two channel layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device simulations, we investigate the device performance focusing on the electrical potential, electron concentration, breakdown voltage and transconductance (gm). Also, the results have been compared with structure of AlGaN/GaN HEMT. Our simulation results reveal that the proposed structure increases electron concentration, breakdown voltage and transconductance; and reduces the leakage current. Also, the mole fraction of aluminum in the InAlGaN has been optimized to create the best performing device.