Tu, M.-H., Lin, J.-Y., Tsai, M.-C., Lu, C.-Y., Lin, Y.-J., Wang, M.-H., Huang, H.-S., Lee, K.-D., Shih, W.-C.(W.), Jou, S.-J. and Chuang, C.-T. (2012) A Single-Ended Disturb Free 9T Subthreshold SRAM with Cross-Point Data-Aware Write Word-Line Structure, Negative Bit-Line, and Adaptive Read Operation Timing Tracing. IEEE Journal of Solid-State Circuits, 47, 1469-1482.
http://dx.doi.org/10.1109/JSSC.2012.2187474

has been cited by the following article:

• TITLE: Leakage Analysis of a Low Power 10 Transistor SRAM Cell in 90 nm Technology

  AUTHORS: Parimaladevi Muthusamy, Sharmila Dhandapani

  KEYWORDS: SRAM, Transmission Gate, Subthreshold Leakage, Gate Leakage, Read Access Time, Write Access Time

  JOURNAL NAME: Circuits and Systems, Vol.7 No.6, May 27, 2016

  ABSTRACT: In this paper, a novel 10 Transistor Static Random Access Memory (SRAM) cell is proposed. Read and Write bit lines are decoupled in the proposed cell. Feedback loop-cutting with single bit line write scheme is employed in the 10 Transistor SRAM cell to reduce active power consumption during the write operation. Read access time and write access time are measured for proposed cell architecture based on Eldo SPICE simulation using TSMC based 90 nm Complementary Metal Oxide Semiconductor (CMOS) technology at various process corners. Leakage current measurements made on hold mode of operation show that proposed cell architecture is having 12.31 nano amperes as compared to 40.63 nano amperes of the standard 6 Transistor cell. 10 Transistor cell also has better performance in terms of leakage power as compared to 6 Transistor cell.