Xu, C.K., Chun, J.W., Kim, D.E., Kim, J., Chon, B. and Joo, T. (2007) Electrical Properties and Near Band Edge Emission of Bi-Doped ZnO Nanowires. Applied Physics Letters, 90, Article ID: 083113.
http://dx.doi.org/10.1063/1.2431715

has been cited by the following article:

• TITLE: Electric-Field-Assisted Growth of Ga-Doped ZnO Nanorods Arrays for Dye-Sensitized Solar Cells

  AUTHORS: Jinxia Duan, Qiu Xiong, Jinghua Hu, Hao Wang

  KEYWORDS: Ga-Doped ZnO, Electric-Field-Assisted, Wet Chemical Method, Dye-Sensitized Solar Cells

  JOURNAL NAME: Journal of Power and Energy Engineering, Vol.3 No.12, December 18, 2015

  ABSTRACT: A photoanode with Ga-doped ZnO nanorods has been prepared on F-doped SnO2 (FTO) coated glass substrate and its application in dye-sensitized solar cells (DSSCs) has been investigated. Ga-doped ZnO nanorods have been synthesized by an electric-field-assisted wet chemical approach at 80?C. Under a direct current electric field, the nanorods predominantly grow on cathodes. The results of the X-ray photoelectron spectroscopy and photoluminescence verify that Ga dopant is successfully incorporated into the ZnO wurtzite lattice structure. Finally, employing Ga-doped ZnO nanorods with the length of ~5 μm as the photoanode of DSSCs, an overall energy conversion efficiency of 2.56% is achieved. The dramatically improved performance of Ga-doped ZnO based DSSCs compared with that of pure ZnO is due to the higher electron conductivity.