Traore, Y., Thiam, N., Thiame, M., Thiam, A., Ba, M.L., Diouf, M.S., Diatta, I., Mballo, O., Sow, E.H., Wade, M. and Sissoko, G. (2019) Journal of Modern Physics, 10, 1235-1246.
http://www.scirp.org/journal/jmp
https://doi.org/10.4236/jmp.2019.1010082

has been cited by the following article:

• TITLE: Influence of Both Magnetic Field and Temperature on Silicon Solar Cell Base Optimum Thickness Determination

  AUTHORS: Nouh Mohamed Moctar Ould Mohamed, Ousmane Sow, Sega Gueye, Youssou Traore, Ibrahima Diatta, Amary Thiam, Mamour Amadou Ba, Richard Mane, Ibrahima Ly, Gregoire Sissoko

  KEYWORDS: Silicon Solar Cell, Diffusion Coefficient, Surface Recombination Velocity, Optimum Base Thickness, Lorentz and Umklapp Processes

  JOURNAL NAME: Journal of Modern Physics, Vol.10 No.13, November 25, 2019

  ABSTRACT: The minority carrier’s recombination velocity at the junction and at the back surface is used for the modeling and determination of the optimum thickness of the base of a silicon solar cell in the static regime, under magnetic field and temperature influence. This study takes into account the Umklapp process and the Lorentz effect on the minority carriers photogenerated in the base.