[1]
|
Monemar, B. (1999) III-V Nitrides—Important Future Electronic Materials. Journal of Materials Science: Materials in Electronics, 10, 227-254.
https://doi.org/10.1023/A:1008991414520
|
[2]
|
Reshchikov, M.A. and Morkoc, H. (2005) Luminescence Properties of Defects in GaN. Journal of Applied Physics, 97, 061301. https://doi.org/10.1063/1.1868059
|
[3]
|
Yu, H., Caliskan, D. and Ozybay, E. (2006) Growth of High Crystalline Quality Semi-Insulating GaN Layers for High Electron Mobility Transistor Applications. Journal of Applied Physics, 100, 033501. https://doi.org/10.1063/1.2221520
|
[4]
|
Lester, S.D., Ponce, F.A., Craford, M.G. and Steigerwald, D.A. (1995) High Dislocation Densities in High Efficiency GaN-Based Light-Emitting Diodes. Applied Physics Letter, 66, 1249-1251. https://doi.org/10.1063/1.113252
|
[5]
|
Weimann, N.G., Eastman, L.F., Doppalapudi, D., Ng, H.M. and Moustakas, T.D. (1998) Scattering of Electrons at Threading Dislocations in GaN. Journal of Applied Physics, 83, 3656-3659. https://doi.org/10.1063/1.366585
|
[6]
|
Cao, X.A., Teetsov, J.A., Sandvik, F.S. and Arthur, S.D. (2004) Microstructural Origin of Leakage Current in GaN/InGaN Light-Emitting Diodes. Journal of Crystal Growth, 264, 172-177. https://doi.org/10.1016/j.jcrysgro.2004.01.031
|
[7]
|
Guha, S., Depuydt, J.M., Haase, M.A., Qiu, J. and Cheng, H. (1993) Degradation of II-VI Base Blue-Green Light Emitters. Applied Physics Letter, 63, 3107-3109.
https://doi.org/10.1063/1.110218
|
[8]
|
Sugahara, T., Sato, H., Hao, M., Naoi, Y., Kurai, S., Tottori, S., Yamashita, K., Nishino, K., Romano, L.T. and Sakai, S. (1998) Direct Evidence That Dislocations Are Nonradiative Recombination Centers in GaN. Japanese Journal of Applied Physics, 37, L398-L400.
|
[9]
|
Rosner, S.J., Carr, E.C., Ludowise, M.J., Girolami, G. and Erikson, H.I. (1997) Correlation of Cathodoluminescence Inhomogeneity with Microstructural Defects in Epitaxial GaN Grown by Metal Organic Chemical Vapor Deposition. Applied Physics Letter, 70, 420-422. https://doi.org/10.1063/1.118322
|
[10]
|
Yoshida, S., Misawa, S. and Gonda, S. (1983) Improvements on the Electrical and Luminescent Properties of Reactive Molecular Beam Epitaxially Grown GaN Films by Using AlN Coated Sapphire Substrates. Applied Physics Letter, 42, 427-429.
https://doi.org/10.1063/1.93952
|
[11]
|
Kuznia, J.N., Khan, M.A., Olson, D.T., Kaplan, R. and Freitas, J. (1993) Influence of Buffer Layers on the Deposition of High Quality Single Crystal GaN over Sapphire Substrates. Journal of Applied Physics, 73, 4700-4702.
https://doi.org/10.1063/1.354069
|
[12]
|
Coreki, S., Ozturk, M.K., Bengi, A., Cakmak, M., Ozcelik, S. and Ozbay, E. (2011) Charaterization of an AlN Buffer Layer and a Thick-GaN Layer Grown on Sapphire Substrate by Metal Organic Chemical Vapor Deposition (MOCVD). Journal of Material Science, 46, 1606-1612. https://doi.org/10.1007/s10853-010-4973-7
|
[13]
|
Amano, H., Sawaki, N., Akasaki, I. and Toyoda, Y. (1986) Metalorganic Vapor Phase Epitaxial Growth of High Quality GaN Film Using an AlN Buffer Layer. Applied Physics Letter, 48, 353-355. https://doi.org/10.1063/1.96549
|
[14]
|
Jeon, H.C., Lee, S.J., Kumar, S., Kang, T.W., Lee, N.H. and Kim, T.W. (2014) Effect of AlN Buffer Layers on the Structural and Optical Properties of GaNEpilayer Grown on Al2O3 Substrates by Using Plasma Assisted Molecular Beam Epitaxy. Journal of Korean Physical Society, 64, 1128-1131.
https://doi.org/10.3938/jkps.64.1128
|
[15]
|
Amano, H., Iwaya, M., Kashima, T., Katsuragawa, M., Akasaki, I., Han, J., Hearne, S., Floro, J.A., Chason, E. and Figile, J. (1998) Stress and Defect Control in GaN Using Low Temperature Interlayers. Japanese Journal of Applied Physics, 37, L1540-L1542. https://doi.org/10.1143/JJAP.37.L1540
|
[16]
|
Muhtadi, S., Hwang, S., Coleman, A., Asif, F., Lunev, A., Chandrashekhar, M.V.S. and Khan, A. (2017) High Temperature Operation of n-AlGaN Channel Metal Semiconductor Field Effect Transistors on Low-Defect AlN Templates. Applied Physics Letters, 110, Article ID: 193501. https://doi.org/10.1063/1.4982656
|
[17]
|
Fleischmann, S., Richter, E., Mogilatenko, A., Weyers, M. and Tränkle, G. (2017) Influence of AlN Buffer Layer on Growth of AlGaN by HVPE. Physica Status Solidi (B), 254, Article ID: 1600696. https://doi.org/10.1002/pssb.201600696
|
[18]
|
Detchprohm, T., Yano, M., Sano, S., Nakamura, R., Mochiduki, S., Nakamura, T., Amano, H. and Akasaki, I. (2001) Heteroepitaxial Lateral Overgrowth of GaN on Periodically Grooved Substrates a New Approach for Growing Low-Dislocation-Density GaN Single Crystals. Japanese Journal of Applied Physics, 40, L16-L19.
https://doi.org/10.1143/JJAP.40.L16
|
[19]
|
Yang, J.H., Kang, S.M., Dinh, D.V. and Yoon, D.H. (2009) Influence of AlN Buffer Layer Thickness and Deposition Methods on GaN Epitaxial Growth. Thin Solid Films, 517, 5057-506. https://doi.org/10.1016/j.tsf.2009.03.089
|
[20]
|
Wang, C.D., Yu, L.S., Lau, S.S., Yu, E.T., Kim, W., Botchkarev, A.E. and Morkoc, H. (1998) Deep Level Defects in n-Type GaN Grown by Molecular Beam Epitaxy. Applied Physics Letters, 72, 1211-1213. https://doi.org/10.1063/1.121016
|
[21]
|
Gotz, W., Johnson, N.M., Amano, H. and Akasaki, I. (1994) Deep Level Defects in n-Type GaN. Applied Physics Letters, 65, 463-465.
|
[22]
|
Kamata, N., Ocampo, J.M.Z., Hoshino, K., Yamada, K., Nishioka, M., Someya, T. and Arakawa, Y. (1999) Below-Gap Spectroscopy of Semiconductor Quantum Wells by Two Wavelength Excited Photoluminescence. Recent Research Development on Quantum Electronics, 1, 123-135.
|
[23]
|
Grimmeiss, H.G. and Monemar, B. (1973) Some Optical Properties of Cu in GaP. Physica Status Solidi (A), 19, 505-511. https://doi.org/10.1002/pssa.2210190214
|
[24]
|
Tajima, M. (1984) Fatigue and Recovery Effects of the 0.65-eV Emission Band in GaAs. Japanese Journal of Applied Physics, 23, L690-L693.
https://doi.org/10.1143/JJAP.23.L690
|
[25]
|
Touhidul Islam, A.Z.M., Murakoshi, N., Fukuda, T., Hirayama, H. and Kamata, N. (2014) Optical Detection of Nonradiative Recombination Centers in AlGaN Quantum Wells for Deep UV Region. Physica Status Solidi (C), 11, 832-835.
https://doi.org/10.1002/pssc.201300405
|
[26]
|
Julkarnain, M., Fukuda, T., Kamata, N. and Arakawa, Y. (2015) A Direct Evidence of Allocating Yellow Luminescence Band in Undoped GaN by Two-Wavelength Excited Photoluminescence. Applied Physics Letters, 107, Article ID: 212102.
https://doi.org/10.1063/1.4936243
|
[27]
|
Ocampo, J.M.Z., Klausing, Z., Semchinova, H.O., Stemmer, J., Hirasawa, M., Kamata, N. and Yamada, K. (2001) Study of MBE-Grown GaN/AlGaN Quantum Well Structures by Two-Wavelength Excited Photoluminescence. Physica Status Solidi (A), 183, 189-195.
https://doi.org/10.1002/1521-396X(200101)183:1<189::AID-PSSA189>3.0.CO;2-5
|
[28]
|
Kamata, N., Klausing, H., Fedler, F., Mistele, D., Aderhold, J., Semchinova, O.K., Graul, J., Someya, T. and Arakawa, Y. (2004) Effect of Modulation-Doping on Luminescence Properties of Plasma Assisted MBE-Grown GaN/AlGaN Quantum Well. European Physical Journal of Applied Physics, 27, 271-273.
|
[29]
|
Klausing, H., Kamata, N., Takahashi, F., Fedler, F., Mistele, D., Aderhold, J., Semchinova, O.K., Graul, J., Someya, T. and Arakawa, Y. (2003) Improved Quality of Plasma Assisted MBE-Grown GaN/AlGaN Quantum Wells Revealed by Two-Wavelength Excited Photoluminescence. Physica Status Solidi (C), 2658-2661.
https://doi.org/10.1002/pssc.200303473
|
[30]
|
Shockley, W. and Read, W.T. (1952) Statistics of the Recombinations of Holes and Electrons. Physical Review, 87, 835-842. https://doi.org/10.1103/PhysRev.87.835
|
[31]
|
Hall, R.N. (1952) Electron-Hole Recombination in Germanium. Physical Review, 87, 387. https://doi.org/10.1103/PhysRev.87.387
|
[32]
|
Piprek, J. (2010) Efficiency Droop in Nitride-Based Light-Emitting Diodes. Physica Status Solidi (A), 207, 2217-2225. https://doi.org/10.1002/pssa.201026149
|
[33]
|
Grieshaber, W., Schubert, E.F., Goepfert, I.D., Karlicek, R.F., Schurman Jr., M.J. and Tran, C. (1996) Competition between Band Gap and Yellow Luminescence in GaN and Its Relevance for Optoelectronic Devices. Journal of Applied Physics, 80, 4615-4620. https://doi.org/10.1063/1.363443
|
[34]
|
Reschikov, M.A. and Korotkov, R.Y. (2001) Analysis of the Temperature and Excitation Intensity Dependencies of Photoluminescence in Undoped GaN Films. Physical Review B, 64, Article ID: 115205.
|
[35]
|
Kamata, N., Ocampo, J.M.Z., Okamoto, W., Hoshino, K., Someya, T., Arakawa, Y. and Yamada, K. (2002) Below-Gap Recombination Dynamics in GaN Revealed by Time-Resolved and Two-Wavelength Excited Photoluminescence. Materials Science and Engineering: B, 91-92, 290-293. https://doi.org/10.1016/S0921-5107(01)01032-7
|